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Researcher profile

M. Tachiki

M. Tachiki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.str-el

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Published work

5 published item(s)

preprint2015arXiv

Visualizing the Pt doping effect on surface and electronic structure in Ir_{1-x}Pt_{x}Te_{2} by scanning tunneling microscopy and spectroscopy

We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a triangular lattice of topmost Te atoms. The compounds that undergo structural transition have supermodulation with a fixed wave vector $q = \frac{2π}{5a_m}$ (where $a_m$ is the lattice constant in the monoclinic phase) despite the different Pt concentrations. The superconducting compounds show patch structures. The surface of the compound that exhibits neither the superconductivity nor the structural transition shows no superstructure. In all doped samples, the dopant is observed as a dark spot in STM images. The tunneling spectra near the dopant show the change in the local density of state at approximately -200 mV. Such microscopic effects of the dopant give us the keys for establishing a microscopic model of this material.

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preprint2013arXiv

Visualization of the effect of structural supermodulation on electronic structure in IrTe$_{2}$ by scanning tunneling spectroscopy

We report on the scanning tunneling spectroscopy experiments on single crystals of IrTe$_{2}$. A structural supermodulation and a local density-of-states (LDOS) modulation with a wave vector of $q$ = 1/5$\times$$2π/a_{0}$ ($a_{0}$ is the lattice constant in the $ab$-plane) have been observed at 4.2K where the sample is in the monoclinic phase. %We cannot find an energy gap emerging reproducibly.% on the region where the supermodulation resides. As synchronized with the supermodulation, the LDOS spatially modulates within two energy ranges (below -200 meV and around -100 meV). We further investigated the effect of the local perturbations including the antiphase boundaries and the twin boundaries on the LDOS. These perturbations also modify the LDOS below -200 meV and around -100 meV, even though the lattice distortions induced by these perturbations appear to be different from those by the supermodulation. Our results indicating several microscopic structural effects on the LDOS seem to offer crucial keys for the establishment of the microscopic model describing the parent state.

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preprint2011arXiv

Tunable terahertz emission from Bi2Sr2CaCu2O8+δ mesa devices

We have measured coherent terahertz emission spectra from Bi2Sr2CaCu2O8+δ mesa devices, as a function of temperature and mesa bias voltage. The emission frequency is found to be tunable by up to 12% by varying the temperature and bias voltage. We attribute the appearance of tunability to asymmetric boundaries at the top and bottom, and the non-rectangular cross-section of the mesas. This interpretation is consistent with numerical simulations of the dynamics of intrinsic Josephson junctions in the mesa. Easily tunable emission frequency may have important implications for the design of terahertz devices based on stacked intrinsic Josephson junctions.

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preprint2009arXiv

Emission of Terahertz Waves from Stacks of Intrinsic Josephson Junctions

By patterning mesoscopic crystals of Bi2Sr2CaCu2O8 (BSCCO) into electromagnetic resonators the oscillations of a large number of intrinsic Josephson junctions can be synchronized into a macroscopic coherent state accompanied by the emission of strong continuous wave THz-radiation. The temperature dependence of the emission is governed by the interplay of self-heating in the resonator and by re-trapping of intrinsic Josephson junctions which can yield a strongly nonmonotonic temperature dependence of the emission power. Furthermore, proper shaping of the resonators yields THzsources with voltage-tunable emission frequencies.

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preprint2009arXiv

Thermal Management in Large Bi2212 Mesas used for Terahertz Sources

We present a thermal analysis of a patterned mesa on a Bi2Sr2CaCu2O8 (Bi2212) single crystal that is based on tunneling characteristics of the c-axis stack of ~800 intrinsic Josephson junctions in the mesa. Despite the large mesa volume (e.g., 40x300x1.2 micron3) and power dissipation that result in selfheating and backbending of the current-voltage curve (I-V), there are accessible bias conditions for which significant polarized THz-wave emission can be observed. We estimate the mesa temperature by equating the quasiparticle resistance, Rqp(T), to the ratio V/I over the entire I-V including the backbending region. These temperatures are used to predict the unpolarized black-body radiation reaching our bolometer and there is substantial agreement over the entire I-V. As such, backbending results from the particular Rqp(T) for Bi2212, as first discussed by Fenton, rather than a significant suppression of the energy gap. This model also correctly predicts the observed disappearance of backbending above ~60 K.

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