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M. T. Wei

M. T. Wei appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.supr-con nlin.CD

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preprint2020arXiv

Josephson Detection of Time Reversal Symmetry Broken Superconductivity in SnTe Nanowires

Exotic superconductors, such as high T$_C$, topological, and heavy-fermion superconductors, require phase sensitive measurements to determine the underlying pairing. Here we investigate the proximity-induced superconductivity in nanowires of SnTe, where an $s\pm is^{\prime}$ superconducting state is produced that lacks the time-reversal and valley-exchange symmetry of the parent SnTe. This effect, in conjunction with a ferroelectric distortion of the lattice at low temperatures, results in a marked alteration of the properties of Josephson junctions fabricated using SnTe nanowires. This work establishes the existence of a ferroelectric transition in SnTe nanowires and elucidates the role of ferroelectric domain walls on the flow of supercurrent through SnTe weak links. We detail two unique characteristics of these junctions: an asymmetric critical current in the DC Josephson effect and a prominent second harmonic in the AC Josephson effect. Each reveals the broken time-reversal symmetry in the junction. The novel $s\pm is^{\prime}$ superconductivity and the new Josephson effects can be used to investigate fractional vortices [1,2], topological superconductivity in multiband materials [3-5], and new types of Josephson-based devices in proximity-induced multiband and ferroelectric superconductors [6,7].

preprint2020arXiv

Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

preprint2019arXiv

Anomalous Phase Dynamics of Driven Graphene Josephson Junctions

Josephson junctions with weak-links of exotic materials allow the elucidation of the Josephson effect in previously unexplored regimes. Further, such devices offer a direct probe of novel material properties, for example in the search for Majorana fermions. In this work, we report on DC and AC Josephson effect of high-mobility, hexagonal boron nitride (h-BN) encapsulated graphene Josephson junctions. On the application of RF radiation, we measure phase-locked Shapiro steps. An unexpected bistability between $\pm 1$ steps is observed with switching times on the order of seconds. A critical scaling of a bistable state is measured directly from the switching time, allowing for direct comparison to numerical simulations. We show such intermittent chaotic behavior is a consequence of the nonlinear dynamics of the junction and has a sensitive dependence on the current-phase relation. This work draws connections between nonlinear phenomena in dynamical systems and their implications for ongoing condensed matter experiments exploring topology and exotic physics.

preprint2016arXiv

Ballistic graphene Josephson junctions from the short to the long regime

We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $δE$ (or $Δ$) and the number of the junction's transversal modes.