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Researcher profile

M. Sprinkle

M. Sprinkle contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

8 published item(s)

preprint2012arXiv

Resonant Excitation of Graphene K-Phonon and Intra-Landau-Level Excitons in Magneto-Optical Spectroscopy

Precise infrared magnetotransmission experiments have been performed in magnetic fields up to 32 T on a series of multilayer epitaxial graphene samples. We observe changes in the spectral features and broadening of the main cyclotron transition when the incoming photon energy is in resonance with the lowest Landau level separation and the energy of a K point optical phonon. We have developed a theory that explains and quantitatively reproduces the frequency and magnetic field dependence of the phenomenon as the absorption of a photon together with the simultaneous creation of an intervalley, intra-Landau-level exciton, and a K phonon.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Directed self-organization of graphene nanoribbons on SiC

Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of a magnetic field on the two-phonon Raman scattering in graphene

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Structure and electronic properties of epitaxial graphene grown on SiC

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

First direct observation of a nearly ideal graphene band structure

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: A comparison

Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dirac fermions, the data obtained on bulk graphite can only be explained taking into account the 3D nature of graphite, e.g. by using the standard Slonczewski-Weiss-McClure model.

0 citations0 reviewsNo code linkedOpen access