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M. Shahbazi

M. Shahbazi contributes to research discovery and scholarly infrastructure.

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cond-mat.str-el cond-mat.supr-con math.DG

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preprint2015arXiv

Electrical transport near quantum criticality in low dimensional organic superconductors

We propose a theory of longitudinal resistivity in the normal phase of quasi-one-dimensional organic superconductors near the quantum critical point where antiferromagnetism borders with superconductivity under pressure. The linearized semi-classical Boltzmann equation is solved numerically, fed in by the half-filling electronic umklapp scattering vertex as derived from one-loop renormalization group calculations for the quasi-one-dimensional electron gas model. The momentum and temperature dependence of umklapp scattering has an important impact on the behaviour of longitudinal resistivity in the the normal phase. Resistivity is found to be linear in temperature around the quantum critical point at which spin-density-wave order joins superconductivity along the antinesting axis, to gradually evolve towards the Fermi liquid behaviour in the limit of weak superconductivity. A comparison is made between theory and experiments performed on the (TMTSF)$_2$PF$_6$ member of the Bechgaard salt series under pressure.

preprint2013arXiv

On Generalized m-th Root Finsler Metrics

In this paper, we characterize locally dually flat generalized m-th root Finsler metrics. Then we find a condition under which a generalized m-th root metric is projectively related to a m-th root metric. Finally, we prove that if a generalized m-th root metric is conformal to a m-th root metric, then both of them reduce to Riemannian metrics.

preprint2011arXiv

Simulation of light C4+ ion irradiation and its significant enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals

In this work, we report the simulation of C4+ irradiation and its significant effects towards the enhancement of the critical current density in BaFe1.9Ni0.1As2 single crystals. BaFe1.9Ni0.1As2 single crystals with and without the C-implantation were characterized by magneto-transport and magnetic measurements up to 13 T over a wide range of temperatures below and above the superconducting critical temperature, Tc. It is found that the C-implantation causes little change in Tc, but it can greatly enhance the in-field critical current density by a factor of up to 1.5 with enhanced flux jumping at 2 K. Our Monte Carlo simulation results show that all the C ions end up in a well defined layer, causing extended defects and vacancies at the layer, but few defects elsewhere on the implantation paths. This type of defect distribution is distinct from the columnar defects produced by heavy ion implantation. Furthermore, the normal state resistivity is enhanced by the light C4+ irradiation, while the upper critical field, Hc2, the irreversibility field, Hirr, and Tc were affected very little.