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Source author record

M. S. Rzchowski

M. S. Rzchowski appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elphysics.app-ph

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Published work

9 published item(s)

preprint2020arXiv

Superconductivity in Undoped BaFe2As2 by Tetrahedral Geometry Design

Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic frustration and the pairing mechanism through changes of orbital overlap and occupancies7-11. Here, we experimentally demonstrate a systematic approach to realize superconductivity without chemical doping in BaFe2As2, employing geometric design within an epitaxial heterostructure. We control both tetragonality and orthorhombicity in BaFe2As2 through superlattice engineering, which we experimentally find to induce superconductivity when the As-Fe-As bond angle approaches that in a regular tetrahedron. This approach of superlattice design could lead to insights into low dimensional superconductivity in Fe-based superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spontaneous Hall Effect enhanced by local Ir moments in epitaxial Pr$_2$Ir$_2$O$_7$ thin films

Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk Pr2Ir2O7 shows a spontaneous hysteretic Hall effect below 1.5K, we observe the effect at elevated temperatures up to 15K in epitaxial thin films on (111) YSZ substrates synthesized via solid phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction (XRD) and x-ray magnetic circular dichroism (XMCD) to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. We link the thin film Ir local moments to lattice distortions absent in the bulk-like powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials.

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preprint2019arXiv

Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition

Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this directly modifies the metal-to-insulator phase transition in epitaxial (001) NdNiO3 thin films. Theoretically, we predict that the Ni-O-Ni bond angle decreases, while octahedral tilt and local disproportionation of the NiO6 octahedra increases resulting in a small band gap in otherwise metallic system. This is driven by an increase in oxygen vacancy concentration in the rare-earth nickelates with increasing in-plane biaxial tensile strain. Experimentally, we find an increase in pseudocubic unit-cell volume and resistivity with increasing biaxial tensile strain, corroborating our theoretical predictions. With electron energy loss spectroscopy and x-ray absorption, we find a reduction of the Ni valence with increasing tensile strain. These results indicate that epitaxial strain modifies the oxygen stoichiometry of rare-earth perovskite thin films and through this mechanism affect the metal-to-insulator phase transition in these compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Charge Density Wave Modulation in Superconducting BaPbO$_3$/BaBiO$_3$ Superlattices

The isotropic, non-magnetic doped BaBiO$_3$ superconductors maintain some similarities to high-Tc cuprates, while also providing a cleaner system for isolating charge density wave (CDW) physics that commonly competes with superconductivity. Artificial layered superlattices offer the possibility of engineering the interaction between superconductivity and CDW. Here we stabilize a low temperature, fluctuating short range CDW order by using artificially layered epitaxial (BaPbO$_3$)$_{3m}$/(BaBiO$_3$)$_m$ (m = 1-10 unit cells) superlattices that is not present in the optimally doped BaPb$_{0.75}$Bi$_{0.25}$O$_3$ alloy with the same overall chemical formula. Charge transfer from BaBiO$_3$ to BaPbO$_3$ effectively dopes the former and suppresses the long range CDW, however as the short range CDW fluctuations strengthens at low temperatures charge appears to localize and superconductivity is weakened. The monolayer structural control demonstrated here provides compelling implications to access controllable, local density-wave orders absent in bulk alloys and manipulate phase competition in unconventional superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction behavior, and that increasing the carrier concentration by growing at lower oxygen partial pressure changes the conduction from strongly localized at low carrier concentration to metallic at higher carrier concentration, with indications of weak localization. We interpret this behavior in terms of a changing occupation of Ti 3d bands near the interface, each with a different spatial extent and susceptibility to localization by disorder, and differences in carrier confinement due to misfit strain and point defects.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Conductance asymmetry in point-contacts on epitaxial thin films of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$

Point-contact spectroscopy is a powerful tool for probing superconductors. One of the most common observations in the point-contact spectra on the recently discovered ferropnictide superconductors is a large conductance asymmetry with respect to voltage across the point-contact. In this paper we show that the antisymmetric part of the point-contact spectrum between a silver tip and an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ shows certain unique features. These features have an interesting evolution with increasing temperature up to a temperature that is 30% larger than the critical temperature $T_c$ of the superconductor. We argue that this evolution can be associated with the rich normal state properties of these materials.

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preprint2010arXiv

Phase-incoherent superconducting pairs in the normal state of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$

The normal state properties of the recently discovered ferropnictide superconductors might hold the key to understanding their exotic superconductivity. Using point-contact spectroscopy we show that Andreev reflection between an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ and a silver tip can be seen in the normal state of the film up to temperature $T\sim1.3T_c$, where $T_c$ is the critical temperature of the superconductor. Andreev reflection far above $T_c$ can be understood only when superconducting pairs arising from strong fluctuation of the phase of the complex superconducting order parameter exist in the normal state. Our results provide spectroscopic evidence of phase-incoherent superconducting pairs in the normal state of the ferropnictide superconductors.

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preprint2010arXiv

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.

0 citations0 reviewsNo code linkedOpen access