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Researcher profile

M. S. Rzchowski

M. S. Rzchowski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.app-ph

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Published work

5 published item(s)

preprint2020arXiv

Superconductivity in Undoped BaFe2As2 by Tetrahedral Geometry Design

Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic frustration and the pairing mechanism through changes of orbital overlap and occupancies7-11. Here, we experimentally demonstrate a systematic approach to realize superconductivity without chemical doping in BaFe2As2, employing geometric design within an epitaxial heterostructure. We control both tetragonality and orthorhombicity in BaFe2As2 through superlattice engineering, which we experimentally find to induce superconductivity when the As-Fe-As bond angle approaches that in a regular tetrahedron. This approach of superlattice design could lead to insights into low dimensional superconductivity in Fe-based superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spontaneous Hall Effect enhanced by local Ir moments in epitaxial Pr$_2$Ir$_2$O$_7$ thin films

Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk Pr2Ir2O7 shows a spontaneous hysteretic Hall effect below 1.5K, we observe the effect at elevated temperatures up to 15K in epitaxial thin films on (111) YSZ substrates synthesized via solid phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction (XRD) and x-ray magnetic circular dichroism (XMCD) to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. We link the thin film Ir local moments to lattice distortions absent in the bulk-like powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition

Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this directly modifies the metal-to-insulator phase transition in epitaxial (001) NdNiO3 thin films. Theoretically, we predict that the Ni-O-Ni bond angle decreases, while octahedral tilt and local disproportionation of the NiO6 octahedra increases resulting in a small band gap in otherwise metallic system. This is driven by an increase in oxygen vacancy concentration in the rare-earth nickelates with increasing in-plane biaxial tensile strain. Experimentally, we find an increase in pseudocubic unit-cell volume and resistivity with increasing biaxial tensile strain, corroborating our theoretical predictions. With electron energy loss spectroscopy and x-ray absorption, we find a reduction of the Ni valence with increasing tensile strain. These results indicate that epitaxial strain modifies the oxygen stoichiometry of rare-earth perovskite thin films and through this mechanism affect the metal-to-insulator phase transition in these compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Charge Density Wave Modulation in Superconducting BaPbO$_3$/BaBiO$_3$ Superlattices

The isotropic, non-magnetic doped BaBiO$_3$ superconductors maintain some similarities to high-Tc cuprates, while also providing a cleaner system for isolating charge density wave (CDW) physics that commonly competes with superconductivity. Artificial layered superlattices offer the possibility of engineering the interaction between superconductivity and CDW. Here we stabilize a low temperature, fluctuating short range CDW order by using artificially layered epitaxial (BaPbO$_3$)$_{3m}$/(BaBiO$_3$)$_m$ (m = 1-10 unit cells) superlattices that is not present in the optimally doped BaPb$_{0.75}$Bi$_{0.25}$O$_3$ alloy with the same overall chemical formula. Charge transfer from BaBiO$_3$ to BaPbO$_3$ effectively dopes the former and suppresses the long range CDW, however as the short range CDW fluctuations strengthens at low temperatures charge appears to localize and superconductivity is weakened. The monolayer structural control demonstrated here provides compelling implications to access controllable, local density-wave orders absent in bulk alloys and manipulate phase competition in unconventional superconductors.

0 citations0 reviewsNo code linkedOpen access