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M. S. Moreno

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2 published item(s)

preprint2025arXiv

Mesoporous Thin Films as Nanoreactors for Complex Oxide Nanoparticle-based Devices

We combine for the first time the properties of ordered mesoporous thin films and complex oxide nanoparticles in the design of new heterostructures, taking advantage of the accessible tridimensional pores network. In this work, we demonstrate the feasibility of synthesizing La0.88Sr0.12MnO3 inside the pores of a mesoporous SiO2 thin film, using pulsed laser deposition. In order to understand the filling process, a set of samples were deposited for three different deposition times, on mesoporous and non-mesoporous SiO2 substrates. Their structural, magnetic, magnetocaloric and electrical transport properties were studied. All the results evidence the presence of the manganite compound inside the pores, which was confirmed by cross-section elemental mapping. X-ray reflectometry shows that it is possible to control the filling of the pores, keeping some accessible porosity. The magnetic behavior suggests the presence of weakly interacting ferromagnetic nanoparticles inside the pores. We provide here a successful strategy for the fabrication of complex oxide nanoparticles arrays with highly controlled size and ordering. Their easy incorporation into micro and nanofabrication procedures unveils direct implications in the field of interfaces and nanoparticle devices as diverse as energy conversion systems, solid oxide fuel cells, spintronics and neuromorphic memristor networks.

preprint2013arXiv

Characterization of Fe-N nano crystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 +- 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth.