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Researcher profile

M. Rudolph

M. Rudolph contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.atom-ph

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Published work

4 published item(s)

preprint2014arXiv

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Probing limits of STM field emission patterned Si:P $δ$-doped devices

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes very slow ($\sim\!10^2~\mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in a high voltage ($>10~\mathrm{V}$) field emission mode, patterning speeds can be increased by orders of magnitude to $\gtrsim\!10^4~\mathrm{nm^2/s}$. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads on these devices. For nanoscale structures, we show that the resulting transport is consistent with the donor incorporation chemistry enhancing the device definition to a scale of $10~\mathrm{nm}$ even though the pattering spot size is $40~\mathrm{nm}$.

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preprint2013arXiv

Trapping of ultra cold atoms in a 3He/4He dilution refrigerator

We describe the preparation of ultra cold atomic clouds in a dilution refrigerator. The closed cycle 3He/4He cryostat was custom made to provide optical access for laser cooling, optical manipulation and detection of atoms. We show that the cryostat meets the requirements for cold atom experiments, specifically in terms of operating a magneto-optical trap, magnetic traps and magnetic transport under ultra high vacuum conditions. The presented system is a step towards the creation of a quantum hybrid system combining ultra cold atoms and solid state quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct current superconducting quantum interferometers with asymmetric shunt resistors

We have investigated asymmetrically shunted Nb/Al-AlO$_x$/Nb direct current (dc) superconducting quantum interference devices (SQUIDs). While keeping the total resistance $R$ identical to a comparable symmetric SQUID with $R^{-1} = R_1^{-1} + R_2^{-1}$, we shunted only one of the two Josephson junctions with $R = R_{1,2}/2$. Simulations predict that the optimum energy resolution $ε$ and thus also the noise performance of such an asymmetric SQUID can be 3--4 times better than that of its symmetric counterpart. Experiments at a temperature of 4.2\,K yielded $ε\approx 32\,\hbar$ for an asymmetric SQUID with an inductance of $22\,\rm{pH}$. For a comparable symmetric device $ε= 110\,\hbar$ was achieved, confirming our simulation results.

0 citations0 reviewsNo code linkedOpen access