Researcher profile

M. Rosmus

M. Rosmus contributes to research discovery and scholarly infrastructure.

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cond-mat.str-el cond-mat.other cond-mat.supr-con

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preprint2026arXiv

Magnetic Excitations of a Half-Filled Tl-based Cuprate

Strong electron correlations drive Mott insulator transitions. Yet, there exists no framework to classify Mott insulators by their degree of correlation. Cuprate superconductors, with their tunable doping and rich phase diagrams, offer a unique platform to investigate the evolution of these interactions. However, spectroscopic access to a clean half-filled Mott-insulating state is lacking in compounds with the highest superconducting onset temperature. To fill this gap, we introduce a pristine, half-filled thallium-based cuprate system, Tl$_2$Ba$_5$Cu$_4$O$_{x}$. Using high-resolution resonant inelastic x-ray scattering, we probe long-lived magnon excitations and uncover a pronounced kink in the magnon dispersion, marked by a simultaneous change in group velocity and lifetime broadening. Modeling the dispersion within a Hubbard-Heisenberg approach, we extract the interaction strength and compare it with other cuprate systems. Our results establish a cuprate universal relation between electron-electron interaction and magnon zone-boundary dispersion. Superconductivity seems to be optimal at intermediate correlation strength, suggesting an optimal balance between localization and itinerancy.

preprint2022arXiv

Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES

We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-doping of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.

preprint2020arXiv

Studies of Electronic Structure across a Quantum Phase Transition in CeRhSb$_{1-x}$Sn$_x$

We study an electronic structure of CeRhSb$_{1-x}$Sn$_x$ system, which displays quantum critical transition from a Kondo insulator to a non-Fermi liquid at $x=0.13$. We provide ultraviolet photoelectron spectra of valence band obtained at 12.5 K. Acoherent peak at the Fermi level is not present in the data, but a signal related to 4f$^1$$_{7/2}$ final state is detected. Spectral intensity at the Fermi edge has a general tendency to grow with Sn content. Theoretical calculations of band structure are realized with full-potential local-orbital minimum-basis code using scalar relativistic and full relativistic approach. The calculations reveal a depletion of density of states at the Fermi level for CeRhSb. This gap is shifted above the Fermi energy with increasing Sn content and thus a rise of density of states at the Fermi level is reflected in the calculations. It agrees with metallic properties of compounds with larger $x$. The calculations also yield another important effects of Sn substitution. Band structure is displaced in a direction corresponding to hole doping, although with deviations from a rigid band shift scenario. Lifshitz transitions modify a topology of the Fermi surface a few times and a number of bands crossing the Fermi level increases.