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Researcher profile

M. Prezioso

M. Prezioso contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging Technologiescond-mat.otherNeural and Evolutionary Computing

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Published work

4 published item(s)

preprint2016arXiv

Advancing Memristive Analog Neuromorphic Networks: Increasing Complexity, and Coping with Imperfect Hardware Components

We experimentally demonstrate classification of 4x4 binary images into 4 classes, using a 3-layer mixed-signal neuromorphic network ("MLP perceptron"), based on two passive 20x20 memristive crossbar arrays, board-integrated with discrete CMOS components. The network features 10 hidden-layer and 4 output-layer analog CMOS neurons and 428 metal-oxide memristors, i.e. is almost an order of magnitude more complex than any previously reported functional memristor circuit. Moreover, the inference operation of this classifier is performed entirely in the integrated hardware. To deal with larger crossbar arrays, we have developed a semi-automatic approach to their forming and testing, and compared several memristor training schemes for coping with imperfect behavior of these devices, as well as with variability of analog CMOS neurons. The effectiveness of the proposed schemes for defect and variation tolerance was verified experimentally using the implemented network and, additionally, by modeling the operation of a larger network, with 300 hidden-layer neurons, on the MNIST benchmark. Finally, we propose a simple modification of the implemented memristor-based vector-by-matrix multiplier to allow its operation in a wider temperature range.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Sub-1-us, Sub-20-nJ Pattern Classification in a Mixed-Signal Circuit Based on Embedded 180-nm Floating-Gate Memory Cell Arrays

We have designed, fabricated, and successfully tested a prototype mixed-signal, 28x28-binary-input, 10-output, 3-layer neuromorphic network ("MLP perceptron"). It is based on embedded nonvolatile floating-gate cell arrays redesigned from a commercial 180-nm NOR flash memory. The arrays allow precise (~1%) individual tuning of all memory cells, having long-term analog-level retention and low noise. Each array performs a very fast and energy-efficient analog vector-by-matrix multiplication, which is the bottleneck for signal propagation in most neuromorphic networks. All functional components of the prototype circuit, including 2 synaptic arrays with 101,780 floating-gate synaptic cells, 74 analog neurons, and the peripheral circuitry for weight adjustment and I/O operations, have a total area below 1 mm^2. Its testing on the common MNIST benchmark set (at this stage, with a relatively low weight import precision) has shown a classification fidelity of 94.65%, close to the 96.2% obtained in simulation. The classification of one pattern takes less than 1 us time and ~20 nJ energy - both numbers much better than for digital implementations of the same task. Estimates show that this performance may be further improved using a better neuron design and a more advanced memory technology, leading to a >10^2 advantage in speed and a >10^4 advantage in energy efficiency over the state-of-the-art purely digital (GPU and custom) circuits, at classification of large, complex patterns.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature-Insensitive Analog Vector-by-Matrix Multiplier Based on 55 nm NOR Flash Memory Cells

We have fabricated and successfully tested an analog vector-by-matrix multiplier, based on redesigned 10x12 arrays of 55 nm commercial NOR flash memory cells. The modified arrays enable high-precision individual analog tuning of each cell, with sub-1% accuracy, while keeping the highly optimized cells, with their long-term state retention, intact. The array has an area of 0.33 um^2 per cell, and is at least one order of magnitude more dense than the reported prior implementations of nonvolatile analog memories. The demonstrated vector-by-vector multiplier, using gate coupling to additional periphery cells, has ~2% precision, limited by the aggregate effect of cell noise, retention, mismatch, process variations, tuning precision, and capacitive crosstalk. A differential version of the multiplier has allowed us to demonstrate sub-3% temperature drift of the output signal in the range between 25C and 85C.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic networks - due to their excellent scaling prospects. Since some advanced cognitive tasks require spiking neuromorphic networks, which explicitly model individual neural pulses (spikes) in biological neural systems, it is crucial for memristive synapses to support the spike-time-dependent plasticity (STDP), which is believed to be the primary mechanism of Hebbian adaptation. A major challenge for the STDP implementation is that, in contrast to some simplistic models of the plasticity, the elementary change of a synaptic weight in an artificial hardware synapse depends not only on the pre-synaptic and post-synaptic signals, but also on the initial weight (memristor's conductance) value. Here we experimentally demonstrate, for the first time, STDP protocols that ensure self-adaptation of the average memristor conductance, making the plasticity stable, i.e. insensitive to the initial state of the devices. The experiments have been carried out with 200-nm Al2O3/TiO2-x memristors integrated into 12x12 crossbars. The experimentally observed self-adaptive STDP behavior has been complemented with numerical modeling of weight dynamics in a simple system with a leaky-integrate-and-fire neuron with a random spike-train input, using a compact model of memristor plasticity, fitted for quantitatively correct description of our memristors.

0 citations0 reviewsNo code linkedOpen access