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M. P. Anantram

M. P. Anantram appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phBiological PhysicsBiomoleculescond-matmath.NA

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Published work

9 published item(s)

preprint2015arXiv

Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells

We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions of the metals, and minority carrier lifetimes on short circuit current as well as open circuit voltage are studied. The most efficient photovoltaic behavior is found to occur when one metal makes a Schottky contact with the wire, and the other makes an Ohmic contact. As wire length increases, both short circuit current and open circuit voltage increase before saturation occurs. Depending on the work function difference between the metals and the wire dimensions, the saturation length increases by approximately an order of magnitude with a two order magnitude increase in minority carrier length. However current per surface area exposed to light is found to decrease rapidly with increase in length. The use of a multi-contact interdigitated design for long wires is investigated to increase the photovoltaic response of the devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. We find two distinct mechanisms that are responsible for NDR, depending on the gate and applied biases, in the same device. The origin of first mechanism is a Fabry-Pé like interference and that of the second mechanism is an in-plane wave vector matching when the Dirac points of the electrodes align. The hBN layers can induce an asymmetry in the current-voltage characteristics which can be further modulated by an applied bias. We find that the electron-phonon scattering introduces the decoherence and therefore suppresses first mechanism whereas second mechanism remains relatively unaffected. We also show that the NDR features are tunable by varying device dimensions. The NDR feature with multiple resonant peaks, combined with the ultrafast tunneling speed provides prospect for the graphene-hBN-graphene heterostructure in the high-performance electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Simulation Study of Schottky Contact Based Single Si Wire Solar Cell

We simulate single silicon nanowire (SiNW) solar cells with dissimilar work function metal contacts. Both short circuit current (ISC) and open circuit voltage (VOC) have been investigated. Effects of nanowire dimension, minority carrier lifetime, and contact metal work function difference are understood through simulations. Both ISC and VOC increase with nanowire length but saturate due to minority carrier recombination. The saturation length is found to be five times the diffusion length. The larger the contact work function difference, the more improved the solar cell characteristics. Large work function differences may also avoid need for any doping in axial p-i-n nanowire solar cells. Saturation in ISC as well as degradation in current density with length can be minimized by spreading the contacts along the length of the nanowire.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A Nested Dissection Approach to Modeling Transport in Nanodevices: Algorithms and Applications

Modeling nanoscale devices quantum mechanically is a computationally challenging problem where new methods to solve the underlying equations are in a dire need. In this paper, we present an approach to calculate the charge density in nanoscale devices, within the context of the non equilibrium Greens function approach. Our approach exploits recent advances in using an established graph partitioning approach. The developed method has the capability to handle open boundary conditions that are represented by full self energy matrices required for realistic modeling of nanoscale devices. Our method to calculate the electron density has a reduced complexity compared to the established recursive Greens function approach. As an example, we apply our algorithm to a quantum well superlattice and a carbon nanotube, which are represented by a continuum and tight binding Hamiltonian respectively, and demonstrate significant speed up over the recursive method.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-bias electron transport properties of germanium telluride ultrathin films

The nanometer-scale size-dependent electronic transport properties of crystalline (c-) and amorphous (a-) germanium telluride (GeTe) ultrathin films sandwiched by titanium nitride (TiN) electrodes are investigated using ab initio molecular dynamics (AIMD), density functional theory (DFT), and Green's function calculations. We find that a-GeTe ultrathin films scaled down to about 38 Angstrom (12 atomic layers) still shows a band gap and the electrical conductance is mainly due to electron transport via intra-gap states. If the ultrathin films are further scaled, the a-GeTe band gap disappears due to overlap of the two metal induced gap states (MIGS) regions near the TiN electrodes, leading to sharp increase of a-GeTe conductance and significant decrease of c-GeTe/a-GeTe conductance ratio. The c-GeTe/a-GeTe conductance ratio drops below one order of magnitude if the ultrathin films are scaled below about 33 Angstrom, making it difficult to reliably perform read operations in thin film based phase change memory devices. This overlap of the MIGS regions sets up the ultimate scaling limit of phase change memory technology. Our results suggest that the ultimate scaling limit can be pushed to even smaller size, by using phase change material (PCM) with larger amorphous phase band gap than a-GeTe.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Scaling Analysis of Nanowire Phase Change Memory

This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM peration schemes (constant electric field, voltage, and current) are studied and compared. It is shown that if the device size is downscaled by a factor of 1/k (k>1), the peration energy (current) will be reduced by more than k3 (k) times, and the operation speed will be increased by k2 times. It is also shown that more than 90% of operation energy is wasted as thermal flux into substrate and electrodes. We predict that, if the wasted thermal flux is effectively reduced by heat confinement technologies, the energy consumed per RESET operation can be decreased from about 1 pJ to less than 100 fJ. It is shown that reducing NW aspect ratio (AR) helps decreasing PCM energy consumption. It is revealed that cross-cell thermal proximity disturbance is counter-intuitively alleviated by scaling, leading to a desirable scaling scenario.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Unified model for conductance through DNA with the Landauer-Buttiker formalism

In this work, we model the zero-bias conductance for the four different DNA strands that were used in conductance measurement experiment [A. K. Mahapatro, K. J. Jeong, G. U. Lee, and D. B. Janes, Nanotechnology 18, 195202 (2007)]. Our approach consists of three elements: (i) ab initio calculations of DNA, (ii) Green's function approach for transport calculations, and (iii) the use of two parameters to determine the decoherence rates. We first study the role of the backbone. We find that the backbone can alter the coherent transmission significantly at some energy points by interacting with the bases, though the overall shape of the transmission stays similar for the two cases. More importantly, we find that the coherent electrical conductance is tremendously smaller than what the experiments measure. We consider DNA strands under a variety of different experimental conditions and show that even in the most ideal cases, the calculated coherent conductance is much smaller than the experimental conductance. To understand the reasons for this, we carefully look at the effect of decoherence. By including decoherence, we show that our model can rationalize the measured conductance of the four strands, both qualitatively and quantitatively. We find that the effect of decoherence on G:C base pairs is crucial in getting agreement with the experiments. However, the decoherence on G:C base pairs alone does not explain the experimental conductance in strands containing a number of A:T base pairs. Including decoherence on A:T base pairs is also essential. By fitting the experimental trends and magnitudes in the conductance of the four different DNA molecules, we estimate for the first time that the deocherence rate is 6 meV for G:C and 1.5 meV for A:T base pairs.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Resonant versus anti-resonant tunneling at carbon nanotube A-B-A heterostructures

Narrow antiresonances going to zero transmission are found to occur for general (2n,0)(n,n)(2n,0) carbon nanotube heterostructures, whereas the complementary configuration, (n,n)(2n,0)(n,n), displays simple resonant tunneling behaviour. We compute examples for different cases, and give a simple explanation for the appearance of antiresonances in one case but not in the other. Conditions and ranges for the occurence of these different behaviors are stated. The phenomenon of anti-resonant tunneling, which has passed unnoticed in previous studies of nanotube heterostructures, adds up to the rich set of behaviors available to nanotube based quantum effect devices.

0 citations0 reviewsNo code linkedOpen access