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Researcher profile

M. Ovadia

M. Ovadia contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.dis-nncond-mat.str-el

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Published work

4 published item(s)

preprint2016arXiv

Evidence for a Finite Temperature Insulator

In superconductors the zero-resistance current-flow is protected from dissipation at finite temperatures (T) by virtue of the short-circuit condition maintained by the electrons that remain in the condensed state. The recently suggested finite-T insulator and the &#34;superinsulating&#34; phase are different because any residual mechanism of conduction will eventually become dominant as the finite-T insulator sets-in. If the residual conduction is small it may be possible to observe the transition to these intriguing states. We show that the conductivity of the high magnetic-field insulator terminating superconductivity in amorphous indium-oxide exhibits an abrupt drop, and seem to approach a zero conductance at T<0.04 K. We discuss our results in the light of theories that lead to a finite-T insulator.

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preprint2015arXiv

High field termination of a Cooper-pair insulator

We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher disorder samples undergo a B-induced transition into a strongly insulating state, which terminates at higher B&#39;s forming an insulating peak. We demonstrate that the B terminating this peak coincides with Bc2 of the lower disorder samples. Additionally we show that, beyond this field, these samples enter a different insulating state in which the magnetic field dependence of the resistance is weak. These results provide crucial evidence for the importance of Cooper-pairing in the insulating peak regime.

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preprint2011arXiv

Electric breakdown effect in the current-voltage characteristics of amorphous indium oxide thin films near the superconductor-insulator transition

Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low temperatures. In this high-resolution study we find that the jumps can be composed of many (up to 100) smaller jumps that appear to be random. This indicates that inhomogeneity develops near the transition to the insulator and that the current breakdown proceed via percolative paths spanning from one electrode to the other.

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preprint2010arXiv

Localization of preformed Cooper-pairs in disordered superconductors

The most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a superconductor then, at low temperatures, disorder can induce a dramatic transition from a superconducting into an insulating state. An outstanding question is whether the route to insulating behavior proceeds via the direct localization of Cooper pairs or, alternatively, by a two-step process in which the Cooper pairing is first destroyed followed by the standard localization of single electrons. Here we address this question by studying the local superconducting gap of a highly disordered, amorphous, superconductor by means of scanning tunneling spectroscopy. Our measurements reveal that, in the vicinity of the superconductor-insulator transition, the coherence peaks in the one-particle density of states disappear while the superconducting gap remains intact indicating the presence of localized Cooper pairs. Our results provide the first direct evidence that the transition in our system is driven by Cooper pair localization.

0 citations0 reviewsNo code linkedOpen access