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Source author record

M. O. Nestoklon

M. O. Nestoklon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

15 published item(s)

preprint2025arXiv

Application of perturbation theory to finding vibrational frequencies of a spheroid

We apply perturbation theory of boundary conditions, originally developed by A.B. Migdal and independently by S.A. Moszkowski for deformed atomic nuclei, to finding eigenfrequencies of Raman-active spheroidal modes of a spheroid from these of a sphere and compare the outcomes with the results of numerical calculations for CdSe and silver nanoparticles. The modes are characterized by the total angular momentum $j=2$ and are five-fold degenerate for a sphere but split into three distinct modes, characterized by the absolute value of the total angular momentum projection onto the spheroidal axis, in case of a spheroid. The perturbation method works well in case of the rigid boundary conditions, with the displacement field set to zero at the boundary, and accurately predicts the splittings when the spheroidal shape is close to a sphere, but fails in case of the stress-free boundary conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Virtual crystal description of III-V semiconductor alloys in the tight binding approach

We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based opto-electronic devices without extensive supercell calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Intrinsic interface states in InAs-AlSb heterostructures

We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended basis spds^* tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb/InAs band offset.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

Energy spectra both of the conduction and valence bands of the HgTe quantum wells with a width close to the Dirac point were studied experimentally. Simultaneous analysis of the Shubnikov-de Haas oscillations and Hall effect over a wide range of electron and hole densities gives surprising result: the top of the valence band is strongly split by spin-orbit interaction while the splitting of the conduction band is absent, within experimental accuracy. Astonishingly, but such a ratio of the splitting values is observed as for structures with normal spectrum so for structures with inverted one. These results do not consistent with the results of kP calculations, in which the smooth electric filed across the quantum well is only reckoned in. It is shown that taking into account the asymmetry of the quantum well interfaces within a tight-binding method gives reasonable agreement with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors

The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis $sp^3d^5s^*$ tight-binding model. The symmetry discrepancy between envelope function theory and atomistic calculations is explained in terms of over symmetric potential in current k$\cdot$p approaches. Spherical harmonics decomposition of microscopic Local Density Of States (LDOS) allows for the direct analysis of the tight-binding results in terms of envelope function. Lifting of degeneracy by strain and electric field and their effect on LDOS is examined. The fine structure of magnetic impurity caused by exchange interaction of hole with impurity $d$-shell and its dependence on strain is studied. It is shown that exchange interaction by mixing heavy and light hole makes the ground state more isotropic. The results are important in the context of Scanning Tunneling Microscopy (STM) images of subsurface impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non-diffusion theory of weak localization in graphene

We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatterers is carefully taken into account. We show that intervalley transitions lead not only to the transition from weak antilocalization to the weak localization, but also to the non-monotonous dependence of the conductivity on the magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. The zero-magnetic-field splitting of Dirac cones can be experimentally revealed in studying magnetotransport phenomena, cyclotron resonance, Raman scattering, or THz radiation absorption.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-dependent inter- and intra-valley electron-phonon scattering in germanium

We investigate the spin-dependent electron-phonon scatterings of the $L$ and $Γ$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the vicinity of the $L$ point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Hamiltonian facilitates the analysis of the spin-related properties of the conduction electrons. We then demonstrate the phonon-induced electron scatterings of the $L$ and $Γ$ valleys, i.e., the intra-$Γ$/ $L$ valley, inter--$Γ$-$L$ valley and inter--$L$-$L$ valley scatterings in germanium. The selection rules and complete scattering matrices for these scatterings are calculated, where the scattering matrices for the intra-$Γ$ valley scattering, inter--$Γ$-$L$ valley scattering and the optical-phonon and the separated transverse-acoustic- and longitudinal-acoustic-phonon contributions to the intra-$Γ$ valley scattering have not been reported in the literature. The coefficients in these scattering matrices are obtained via the pseudo-potential calculation, which also verifies our selection rules and wave-vector dependence. We further discuss the Elliott-Yafet mechanisms in these electron-phonon scatterings with the ${\bm k}$$\cdot$${\bm p}$ eigenstates at the $L$ and $Γ$ valleys. Our investigation of these electron-phonon scatterings are essential for the study of the optical orientation of spin and hot-electron relaxation in germanium.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tight-binding calculations of image charge effects in colloidal nanoscale platelets of CdSe

CdSe nanoplatelets show perfectly quantized thicknesses of few monolayers. They present a situation of extreme, yet well defined quantum confinement. Due to large dielectric contrast between the semiconductor and its ligand environment, interaction between carriers and their dielectric images strongly renormalize bare single particle states. We discuss the electronic properties of this original system in an advanced tight-binding model, and show that Coulomb interactions, including self-energy corrections and enhanced electron-hole interaction, lead to exciton binding energies up to several hundred meVs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures

Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g-factor of both types of carriers. The hole ground state in a monolayer scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anomalous Suppression of Valley Splittings in Lead Salt Nanocrystals without Inversion Center

Atomistic sp3d5s* tight-binding theory of PbSe and PbS nanocrystals is developed. It is demonstrated, that the valley splittings of confined electrons and holes strongly and peculiarly depend on the geometry of a nanocrystal. When the nanocrystal lacks a microscopic center of inversion and has T_d symmetry, the splitting is strongly suppressed as compared to the more symmetric nanocrystals with O_h symmetry, having an inversion center.

0 citations0 reviewsNo code linkedOpen access