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M. Núñez-Regueiro

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4 publications

preprint2014arXiv

Experimental consequences at high temperatures of quantum critical points

We study the Cr_(1-x) Re_x phase diagram finding that its phase transition temperature towards an antiferromagnetic order T_N follows a quantum [(x_c-x)/x_c ]^ψ law, with ψ=1/2, from the quantum critical point (QCP) at x_c=0.25 up to T_N=600K. We compare this system to others in order to understand why this elemental material is affected by the QCP up to such unusually high temperatures. We determine a general criterion for the crossover, as function of an external parameter such as concentration, from the region controlled solely by thermal fluctuations to that where quantum effects become observable. The properties of materials with low coherence lengths will thus be altered far away from the QCP.

preprint2013arXiv

Quantum critical point and superconducting dome in the pressure phase diagram of o-TaS3

We measure the electrical resistance of o-TaS3 between 1K and 300K under pressures up to 20GPa. We observe a gradual decrease of the charge density wave transition temperature with increasing pressure P following a mean-field quantum fluctuation power law with a quantum critical point at a pressure Pc = 11.5GPa. Around the quantum critical point we observe a superconducting dome with a maximum superconducting transition temperature Tc = 3.1K. Such dome is similar to superconducting domes around other types of order suggesting that the QCP is directly responsible for the enhancement of superconductivity through a universal mechanism still not well understood.

preprint2011arXiv

Direct observation of the influence of the As-Fe-As angle on the Tc of superconducting SmFeAsO1−x_{1-x}Fx_{x}

The electrical resistivity, crystalline structure and electronic properties calculated from the experimentally measured atomic positions of the compound SmFeAsO0.81_{0.81}F0.19_{0.19} have been studied up to pressures ~20GPa. The correlation between the pressure dependence of the superconducting transition temperature (Tc) and crystallographic parameters on the same sample shows clearly that a regular FeAs4_{4} tetrahedron maximizes Tc, through optimization of carrier transfer to the FeAs planes as indicated by the evolution of the electronic band structures.

preprint2011arXiv

Effect of the isoelectronic substitution of Sb for As on the magnetic and structural properties of LaFe(As1-xSbx)O

The antiferromagnetic order and structural distortion in the LaFe(As1-xSbx)O system have been investigated by powder neutron diffraction and physical properties measurements. Polycrystalline samples of LaFe(As1-xSbx)O (x<0.5) were prepared using solid state synthesis at ambient and high pressure. We find that the isoelectronic substitution of Sb for As decreases the structural and magnetic transition temperatures but, contrary to the effects of phosphorus substitution, superconductivity is not induced. Instead a slight increase in the Fe magnetic moment is observed.

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