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M. Notomi

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Published work

5 published item(s)

preprint2020arXiv

Photon correlation measurements of stochastic limit cycles emerging from high-$Q$ nonlinear silicon photonic crystal microcavities

We performed measurements of photon correlation [$g^{(2)}(τ)$] in driven nonlinear high-$Q$ silicon (Si) photonic crystal (PhC) microcavities. The measured $g^{(2)}(τ)$ exhibits a damped oscillatory behavior when input pump power exceeds a critical value. From comparison between experiments and simulations, we attribute the measured oscillation of $g^{(2)}(τ)$ to self-pulsing (a limit cycle) emerging from an interplay between photon, carrier, and thermal dynamics. Namely, the oscillation frequency of $g^{(2)}(τ)$ corresponds to the oscillation period of the limit cycle, while its finite coherence (damping) time originates from the stochastic nature of the limit cycle. From the standpoint of phase reduction theory, we interpret the measured coherence time of $g^{(2)}(τ)$ as the coherence (diffusion) time of a generalized phase of the limit cycle. Furthermore, we show that an increase in laser input power enhances the coherence time of $g^{(2)}(τ)$ up to the order of microseconds, which could be a demonstration of the stabilization of a stochastic limit cycle through pumping.

preprint2014arXiv

Movable high Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform

Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high Q nanocavity can be created by placing a single III/V semiconductor nanowire with a diameter of under 100 nm in a grooved waveguide in a Si photonic crystal, by means of nanoprobe manipulation. We observe very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that very strong light confinement can be achieved. Furthermore, this system enables us to move the nanocavity anywhere along the waveguide. This configuration provides a significant degree of flexibility in integrated photonics and permits the addition and displacement of various functionalities of III/V nanocavity devices in Si photonic circuits.

preprint2014arXiv

Spontaneous emission inhibition of telecom-band quantum disks inside single nanowire on different substrates

We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO2), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the high-refractive index materials of Si. Experimentally, the inhibition factor $ζ$ of the Qdisk emission at 1,500 nm decreases from 4.6 to 2.5 for NW on SiO2 and Si substrates, respectively. Those inhibitions are even much smaller than that of 6.4 of the standing NW. The inhibition factors well agree with those calculated from the coupling of the Qdisk to the fundamental guided mode and the continuum of radiative modes. Our observation can be useful for the integration of the NW as light sources in the photonic nanodevices.

preprint2012arXiv

Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in 2D photonic crystals

Using Finite-Difference Time-Domain (FDTD) simulation, we show that ultrahigh- Q nanocavities can be obtained through the manipulation of a single semiconductor nanowire (NW) inside a slot in a line defect of a two-dimensional (2D) photonic crystal. By controlling the design and its lattice parameters of the photonic crystal, we have achieved a quality factor Q larger than 106 and a mode volume Vc smaller than 0.11 μm3 (1.25 of a cubic wavelength in the NW) for a cavity peak in the telecommunication band. This design is useful for realizing a position-controlled cavity in a photonic crystal. Here we also discuss the small dependence of the Qfactor, the Vc, and the cavity peak in relation to the position of the NWinside the slot and the potential application to the cavity quantum electrodynamics (QED) using the embedded-emitter NW.

preprint2012arXiv

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.