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M. Nagao

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7 publications

preprint2016arXiv

Conventional s-wave superconductivity in BiS2-based NdO0.71F0.29BiS2 revealed by thermal transport measurements

To study the superconducting gap structure of BiS2_2-based layered compound NdO0.71_{0.71}F0.29_{0.29}BiS2_{2} (TTc_{\rm c} = 5 K), we measured the thermal conductivity κκ, which is a sensitive probe of the low-energy quasiparticle spectrum. In the absence of a magnetic field, there is only a very small residual linear term in the thermal conductivity κ0κ_{0}/TT at TT →\rightarrow 0, indicating the absence of a residual normal fluid, expected for nodal superconductors. Moreover, the applied magnetic field hardly affects the thermal conductivity in the wide range of the vortex state, indicating the absence of Doppler shifted quasiparticles. These results provide evidence that NdO0.71_{0.71}F0.29_{0.29}BiS2_{2} is fully gapped superconductor. The obtained gap structure, along with the robustness of the superconductivity against the impurity, suggest a conventional ss-wave superconducting state in NdO0.71_{0.71}F0.29_{0.29}BiS2_{2}.

preprint2014arXiv

Checkerboard stripe electronic state on cleaved surface of NdO0.7_{0.7}F0.3_{0.3}BiS2_{2} probed by scanning tunneling microscope

We present scanning tunneling microscopy measurements on a cleaved surface of the recently discovered superconductor NdO0.7_{0.7}F0.3_{0.3}BiS2_{2} with a transition temperature (TcT_{\mathrm{c}}) of 5.1 K.Tunneling spectra at 4.2 K (below TcT_{\mathrm{c}}) and 22 K (above TcT_{\mathrm{c}}) show a large spectroscopic gap (∼\sim40 mV), which is inconsistent with the metallic nature demonstrated in bulk measurements. Moreover, we find two interesting real-space electronic features. The first feature is a `checkerboard stripe' electronic state characterized by an alternating arrangement of two types of nanocluster. In one cluster, one-dimensional electronic stripes run along one Bi-Bi direction, whereas, in the other cluster, the stripes run along the other Bi-Bi direction. The second feature is a nanoscale electronic inhomogeneity whose microscopic source seems to be atomic defects on the cleaved surface or dopant F atoms.

preprint2014arXiv

Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2

The electronic structure of nearly optimally-doped novel superconductor LaO1−x_{1-x}Fx_xBiS2_2 (x{\it x} = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF{\it E}_{\rm F}), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF{\it E}_{\rm F} shows a square-like distribution around the ΓΓ(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54_{0.54}F0.46_{0.46}BiS2_2 is in close proximity to the theoretically-predicted topological change.

preprint2013arXiv

Rotational quenching of rotationally-excited H2_2O in collisions with He

Theoretical rotational quenching cross sections and rate coefficients of ortho- and para-H2_2O due to collisions with He atoms are presented. The complete angular momentum close-coupling approach as well as the coupled-states approximation for angular momentum decoupling were applied to solve the scattering problem for a large range of rotationally-excited states of water. Results are obtained for quenching from initial levels 11,0_{1,0}, 21,2_{1,2}, 22,1_{2,1}, 30,3_{0,3}, 31,2_{1,2}, 32,1_{2,1}, 41,4_{1,4}, 33,0_{3,0}, and 42,3_{2,3} of ortho-H2_2O and from initial levels 11,1_{1,1}, 20,2_{0,2}, 21,1_{1,1}, 22,0_{2,0}, 31,3_{1,3}, 32,2_{2,2}, 40,4_{0,4}, 41,3_{1,3}, and 33,1_{3,1} of para-H2_2O for kinetic energies from 10−5^{-5} to 104^4 cm−1^{-1}. State-to-state and total deexcitation cross sections and rate coefficients for temperatures between 0.1 and 3000 K are reported. The present state-to-state rate coefficients are found to be in good agreement with previous results obtained by Green and coworkers at high temperatures, but significant discrepancies are obtained at lower temperatures likely due to differences in the adopted potential energy surfaces. Astrophysical applications of the current rate coefficients are briefly discussed.

preprint2008arXiv

Electrical properties of boron-doped MWNTs synthesized by hot-filament chemical vapor deposition

We have synthesized a large amount of boron-doped multiwalled carbon nanotubes (MWNTs) by hot-filament chemical vapor deposition. The synthesis was carried out in a flask using a methanol solution of boric acid as a source material. The scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy were performed to evaluate the structural properties of the obtained MWNTs. In order to evaluate the electrical properties, temperature dependence of resistivity was measured in an individual MWNTs with four metal electrodes. The Ramman shifts suggest carrier injection into the boron-doped MWNTs, but the resistivity of the MWNTs was high and increased strongly with decreasing temperature. Defects induced by the plasma may cause this enhanced resistivity.

preprint2006arXiv

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Doping in Boron-doped Diamond:11B-NMR study

We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the effective carriers introduced by B(1) substitution are responsible for the superconductivity, whereas the charge neutral B(2) sites does not offer the carriers effectively. The result is also corroborated by the density of states deduced by 1/T1T measurement, indicating that the evolution of superconductivity is driven by the effective carrier introduced by substitution at B(1) site.

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