Source author record

M. Nagao

M. Nagao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

7works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2016arXiv

Conventional s-wave superconductivity in BiS2-based NdO0.71F0.29BiS2 revealed by thermal transport measurements

To study the superconducting gap structure of BiS$_2$-based layered compound NdO$_{0.71}$F$_{0.29}$BiS$_{2}$ ($T$$_{\rm c}$ = 5 K), we measured the thermal conductivity $κ$, which is a sensitive probe of the low-energy quasiparticle spectrum. In the absence of a magnetic field, there is only a very small residual linear term in the thermal conductivity $κ_{0}$/$T$ at $T$ $\rightarrow$ 0, indicating the absence of a residual normal fluid, expected for nodal superconductors. Moreover, the applied magnetic field hardly affects the thermal conductivity in the wide range of the vortex state, indicating the absence of Doppler shifted quasiparticles. These results provide evidence that NdO$_{0.71}$F$_{0.29}$BiS$_{2}$ is fully gapped superconductor. The obtained gap structure, along with the robustness of the superconductivity against the impurity, suggest a conventional $s$-wave superconducting state in NdO$_{0.71}$F$_{0.29}$BiS$_{2}$.

preprint2014arXiv

Checkerboard stripe electronic state on cleaved surface of NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ probed by scanning tunneling microscope

We present scanning tunneling microscopy measurements on a cleaved surface of the recently discovered superconductor NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ with a transition temperature ($T_{\mathrm{c}}$) of 5.1 K.Tunneling spectra at 4.2 K (below $T_{\mathrm{c}}$) and 22 K (above $T_{\mathrm{c}}$) show a large spectroscopic gap ($\sim$40 mV), which is inconsistent with the metallic nature demonstrated in bulk measurements. Moreover, we find two interesting real-space electronic features. The first feature is a `checkerboard stripe' electronic state characterized by an alternating arrangement of two types of nanocluster. In one cluster, one-dimensional electronic stripes run along one Bi-Bi direction, whereas, in the other cluster, the stripes run along the other Bi-Bi direction. The second feature is a nanoscale electronic inhomogeneity whose microscopic source seems to be atomic defects on the cleaved surface or dopant F atoms.

preprint2014arXiv

Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2

The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${\it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${\it E}_{\rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near ${\it E}_{\rm F}$ shows a square-like distribution around the $Γ$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO$_{0.54}$F$_{0.46}$BiS$_2$ is in close proximity to the theoretically-predicted topological change.

preprint2013arXiv

Rotational quenching of rotationally-excited H$_2$O in collisions with He

Theoretical rotational quenching cross sections and rate coefficients of ortho- and para-H$_2$O due to collisions with He atoms are presented. The complete angular momentum close-coupling approach as well as the coupled-states approximation for angular momentum decoupling were applied to solve the scattering problem for a large range of rotationally-excited states of water. Results are obtained for quenching from initial levels 1$_{1,0}$, 2$_{1,2}$, 2$_{2,1}$, 3$_{0,3}$, 3$_{1,2}$, 3$_{2,1}$, 4$_{1,4}$, 3$_{3,0}$, and 4$_{2,3}$ of ortho-H$_2$O and from initial levels 1$_{1,1}$, 2$_{0,2}$, 2$_{1,1}$, 2$_{2,0}$, 3$_{1,3}$, 3$_{2,2}$, 4$_{0,4}$, 4$_{1,3}$, and 3$_{3,1}$ of para-H$_2$O for kinetic energies from 10$^{-5}$ to 10$^4$ cm$^{-1}$. State-to-state and total deexcitation cross sections and rate coefficients for temperatures between 0.1 and 3000 K are reported. The present state-to-state rate coefficients are found to be in good agreement with previous results obtained by Green and coworkers at high temperatures, but significant discrepancies are obtained at lower temperatures likely due to differences in the adopted potential energy surfaces. Astrophysical applications of the current rate coefficients are briefly discussed.

preprint2008arXiv

Electrical properties of boron-doped MWNTs synthesized by hot-filament chemical vapor deposition

We have synthesized a large amount of boron-doped multiwalled carbon nanotubes (MWNTs) by hot-filament chemical vapor deposition. The synthesis was carried out in a flask using a methanol solution of boric acid as a source material. The scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy were performed to evaluate the structural properties of the obtained MWNTs. In order to evaluate the electrical properties, temperature dependence of resistivity was measured in an individual MWNTs with four metal electrodes. The Ramman shifts suggest carrier injection into the boron-doped MWNTs, but the resistivity of the MWNTs was high and increased strongly with decreasing temperature. Defects induced by the plasma may cause this enhanced resistivity.

preprint2006arXiv

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Doping in Boron-doped Diamond:11B-NMR study

We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the effective carriers introduced by B(1) substitution are responsible for the superconductivity, whereas the charge neutral B(2) sites does not offer the carriers effectively. The result is also corroborated by the density of states deduced by 1/T1T measurement, indicating that the evolution of superconductivity is driven by the effective carrier introduced by substitution at B(1) site.