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M. Minohara

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2015arXiv

Fermi Surfaces and $p$ - $d$ Hybridization in the Diluted Magnetic Semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

The electronic structure of the new diluted magnetic semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ ( $x=0.30$ , $y=0.15$ ) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $Γ$ point, a hole corrugated cylinder surrounding the $Γ$ and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ . This is contrasted with Ga $_{1-x}$ Mn $_{x}$ As (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ and in the impurity band in GaMnAs.

preprint2014arXiv

The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions

We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

preprint2012arXiv

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

preprint2012arXiv

Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3

The correlated electronic structure of SrVO3 has been investigated by angle-resolved photoemission spectroscopy using in-situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ~60 meV below the Fermi level (EF) and a broad so-called "high-energy kink" ~0.3 eV below EF as in the high-Tc cuprates although SrVO3 does not show magnetic fluctuations. We have deduced the self-energy in a wide energy range by applying the Kramers-Kronig relation to the observed spectra. The obtained self-energy clearly shows a large energy scale of ~0.7 eV which is attributed to electron-electron interaction and gives rise to the ~0.3 eV "kink" in the band dispersion as well as the incoherent peak ~1.5eV below EF. The present analysis enables us to obtain consistent picture both for the incoherent spectra and the band renormalization.

preprint2009arXiv

Orientation dependence of the Schottky barrier height for La $_0.6$ Sr $_0.4$ MnO $_3$ /SrTiO $_3$ heterojunctions

The authors report on the crystallographic orientation dependence of the Schottky properties for heterojunctions between a half-metallic ferromagnet La $_0.6$ Sr $_0.4$ MnO $_3$ (LSMO) and Nb-doped SrTiO3 semiconductor. The Schottky barrier height determined by in situ photoemission measurements is independent for the substrate orientations (001) and (110), while the magnetic properties of LSMO (110) films are more enhanced than for (001) films. These results suggest that the performance of magnetic devices based on ferromagnetic manganite is improved by using (110)-oriented substrates.

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M. Minohara

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5 publications

Fermi Surfaces and $p$ - $d$ Hybridization in the Diluted Magnetic Semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3

Orientation dependence of the Schottky barrier height for La $_0.6$ Sr $_0.4$ MnO $_3$ /SrTiO $_3$ heterojunctions

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M. Minohara

Research overview

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5 publications

Fermi Surfaces and ppp-ddd Hybridization in the Diluted Magnetic Semiconductor Ba1−x_{1-x}1−x​Kx_{x}x​(Zn1−y_{1-y}1−y​Mny_{y}y​)2_{2}2​As2_{2}2​ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3

Orientation dependence of the Schottky barrier height for La0.6_0.60​.6Sr0.4_0.40​.4MnO3_33​/SrTiO3_33​ heterojunctions

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Building this map preview

Fermi Surfaces and $p$ - $d$ Hybridization in the Diluted Magnetic Semiconductor Ba $_{1-x}$ K $_{x}$ (Zn $_{1-y}$ Mn $_{y}$ ) $_{2}$ As $_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

Orientation dependence of the Schottky barrier height for La $_0.6$ Sr $_0.4$ MnO $_3$ /SrTiO $_3$ heterojunctions