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M. Merker

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cond-mat.supr-con physics.ins-det

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preprint2015arXiv

Defect controlled vortex generation in current-carrying narrow superconducting strips

We experimentally study effect of single circular hole on the critical current $I_c$ of narrow superconducting strip with width $W$ much smaller than Pearl penetration depth $Λ$. We found nonmonotonous dependence of $I_c$ on the location of a hole across the strip and a weak dependence of $I_c$ on radius of hole has been found in case of hole with $ξ\ll R \ll W$ ($ξ$ is a superconducting coherence length) which is placed in the center of strip. The observed effects are caused by competition of two mechanisms of destruction of superconductivity - the entrance of vortex via edge of the strip and the nucleation of the vortex-antivortex pair near the hole. The mechanisms are clearly distinguishable by difference in dependence of $I_c$ on weak magnetic field.

preprint2014arXiv

Superconducting hot-electron nanobolometer with microwave bias and readout

We propose a new detection technique based on radio-frequency (RF) bias and readout of an antenna-coupled superconducting nanobolometer. This approach is suitable for Frequency-Division-Multiplexing (FDM) readout of large arrays using broadband low-noise RF amplifier. We call this new detector RFTES. This feasibility study was made on demonstrator devices which are made in all-Nb technology and operate at 4.2 K. The studied RFTES devices consist of an antenna-coupled superconducting nanobolometer made of ultrathin niobium films with transition temperature Tc = 5.2 K. The 0.65-THz antenna and nanobolometer are embedded as a load into a GHz-range coplanar niobium resonator (Tc = 8.9 K, Q = 4000). To heat the superconducting Nb nanobolometer close to the Tc, the RF power at resonator frequency f = 5.8 GHz is applied via a transmission line which is weakly coupled (-11 dB) to the loaded resonator. The THz-antenna of RFTES was placed in the focus of a sapphire immersion lens inside a He4-cryostat equipped with an optical window and a semiconductor RF amplifier. We have demonstrated optical response of the RFTES to THz radiation. The demonstrator receiver system employing the RFTES device showed an optical Noise-Equivalent Power (NEP) 1e-14 W/sqrt(Hz) at 4.2 K.

preprint2012arXiv

Sub-μm Josephson Junctions for Superconducting Quantum Devices

For high-performance superconducting quantum devices based on Josephson junctions (JJs) decreasing lateral sizes is of great importance. Fabrication of sub-μm JJs is challenging due to non-flat surfaces with step heights of up to several 100 nm generated during the fabrication process. We have refined a fabrication process with significantly decreased film thicknesses, resulting in almost flat surfaces at intermediate steps during the JJ definition. In combination with a mix-&-match process, combining electron-beam lithography (EBL) and conventional photolithography, we can fabricate JJs with lateral dimensions down to 0.023 μm^2. We propose this refined process as an alternative to the commonly used chemical-mechanical polishing (CMP) procedure. We present transport measurements of JJs at 4.2 K that yield critical-current densities in the range from 50 to 10^4 A/cm^2. Our JJ process yields excellent quality parameters, Rsg/Rn up to ~50 and Vgap up to 2.81 mV, and also allows the fabrication of high-quality sub-μm wide long JJs (LJJs) for the study of Josephson vortex behavior. The developed technique can also be used for similar multilayer processes and is very promising for fabricating sub-μm JJs for quantum devices such as SQUIDs, qubits and SIS mixers.