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M. Matzer

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2020arXiv

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

preprint2018arXiv

Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals

The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $γ$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.

preprint2016arXiv

Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite $n$-GaN:Si

Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III- nitride semiconductors are currently employed as central building-blocks for lighting and high-power devices. Moreover, the long relaxation times and the spin-orbit coupling (SOC) in these materials indicate them as privileged hosts for spin currents and related phenomena. Spin pumping is an efficient mechanism for the inception of spin current and its conversion into charge current in non-magnetic metals and semiconductors with Rashba SOC $via$ spin Hall effects. We report on the generation in $n$-GaN:Si\,--\,at room temperature and through spin pumping\,--\,of pure spin current, fundamental for the understanding of the spin dynamics in these non-centrosymmetric Rashba systems. We find for $n$-GaN:Si a spin Hall angle $θ_{\mathrm{SH}}$=$3.03\times10^{-3}$, exceeding by one order of magnitude those reported for other semiconductors, pointing at III-nitrides as particularly efficient spin current generators.