Source author record

M. -L. Zhang

M. -L. Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
1close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2012arXiv

Shear viscosity: velocity gradient as a constraint on wave function

By viewing a velocity gradient in a fluid as an internal disturbance and treating it as a constraint on the wave function of a system, a linear evolution equation for the wave function is obtained from the Lagrange multiplier method. It allows us to define the microscopic response to a velocity gradient in a pure state. Taking a spatial coarse-graining average over this microscopic response and averaging it over admissible initial states, we achieve the observed macroscopic response and transport coefficient. In this scheme, temporal coarse-graining is not needed. The dissipation caused by a velocity gradient depends on the square of initial occupation probability, whereas the dissipation caused by a mechanical perturbation depends on the initial occupation probability itself. We apply the method of variation of constants to solve the time-dependent Schrodinger equation with constraints. The various time scales appearing in the momentum transport are estimated. The relation\ between the present work and previous theories is discussed.

preprint2010arXiv

Alternative approach to computing transport coefficients: application to conductivity and Hall coefficient of hydrogenated amorphous silicon

We introduce a theoretical framework for computing transport coefficients for complex materials. As a first example, we resolve long-standing inconsistencies between experiment and theory pertaining to the conductivity and Hall mobility for amorphous silicon and show that the Hall sign anomaly is a consequence of localized states. Next, we compute the AC conductivity of amorphous polyanaline. The formalism is applicable to complex materials involving defects and band-tail states originating from static topological disorder and extended states. The method may be readily integrated with current \textit{ab initio} methods.