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M. Kamruddin

M. Kamruddin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

10 published item(s)

preprint2022arXiv

Aging Effects on Vertical Graphene Nanosheets and their Thermal Stability

Vertical Graphene Nano sheets (VGN) have become promising candidates for a wide range of applications due to their unique architecture and remarkable properties. However, utilization of VGN in potential applications relies on their structural and thermal stability in ambient conditions. The present study investigates the environmental aging effects and thermal stability of VGN. The effects of aging on VGN are investigated by Raman spectroscopy, X-ray Photoelectron spectroscopy and electrical measurements at regular intervals for a period of six months. Thermogravimetry was employed to examine the thermal stability of VGN and it is found that they are highly stable upto 575 C in ambient atmosphere. Detailed spectroscopic analysis substantiated the retention of structural quality and surface chemistry of VGN over the test period. These findings asserted the long-term structural as well as thermal stability of VGN up to 575 C and validate their potential utilization for the next-generation device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Influence of nitrogen on the growth of vertical graphene nanosheets under plasma

We have investigated the effect of nitrogen (N2) as a carrier gas on the growth of vertical graphene nanosheets (VGN) by plasma enhanced chemical vapor deposition (PECVD). It is demonstrated that addition of nitrogen gas with a hydrocarbon precursor can enhance the nucleation and growth rate of graphitic base layer as well as vertical sheets. The gas also simultaneously acts as an etchant and a dopant element. The density of vertical sheets increases up to certain limit and start to decrease with further increase in N2 concentration. The synthesized VGN exhibit sheet resistance from 0.89 to 1.89 KΩ/sq. and mobility from 8.05 to 20.14 cm2/V-s, depending on the morphology and type of carrier concentration. These results reveal that the surface morphology and electronic properties of VGN can be tuned by incorporation of nitrogen gas during the growth phase.

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preprint2022arXiv

Metal Oxide-Vertical Graphene Nanosheets for 2.6 V Aqueous Electrochemical Hybrid Capacitor

Aqueous asymmetric electrochemical capacitor, with their high power density and superior cycle stability in comparison to conventional batteries, are presently considered as the most promising contender for energy storage. However, fabricating an electrode material and choosing a suitable aqueous electrolyte are vital in developing an electrochemical capacitor device with high charge storage capacity. Herein, we report a feasible method to synthesize MnO2/Vertical graphene nanosheets (VGN) and Fe2O3/VGN as positive and negative electrodes, respectively. The surface of VGN skeleton is independently decorated with MnO2 having sponge gourd-like morphology and Fe2O3 having nanorice like morphology. A schematic representation of the growth mechanism for metal oxide on VGN network is established. Both the electrode have shown around 250 times higher charge-storage capacity than the bare VGN (0.47 mF/cm2) with the specific capacitance of 118 (MnO2/VGN) and 151 mF/cm2 (Fe2O3/VGN). In addition to the double layer capacitance contribution, the porous interconnected vertical graphene architecture serves as a mechanical backbone for the metal oxide materials and provides multiple conducting channels for the electron transport. The fabricated asymmetric device exhibited a specific capacitance of 76 mF/cm2 and energy density of 71 microWh/cm2 with an excellent electrochemical stability up to 12000 cycles, over a potential window of 2.6 V. The commendable performance of asymmetric electrochemical capacitor device authenticated its potential utilization for next-generation portable energy storage device.

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preprint2022arXiv

Plasma-Electric Field Controlled Growth of Oriented Graphene for Energy Storage Applications

Graphene is well known to grow as flat sheets aligned with the growth substrate. Oriented graphene structures typically normal to the substrate have recently gained major attention. Most often, normal orientation is achieved in plasma-assisted growth and is believed to be due to plasma induced in-built electric field, which is usually oriented normal to the substrate. This work focuses on the effect of in-built electric field on growth direction, morphology, interconnectedness, and physical properties of various configurations of graphene structures and reveals the unique dependence of these features on electric field orientation. It is shown that tilting of growth substrates from parallel to normal direction with respect to the direction of inbuilt plasma electric field leads to the morphological transitions from flat graphene structure, to oriented individual graphene sheets and then interconnected three-dimensional networks of oriented graphene sheets. The revealed transition of the growth orientation leads to change in wetting nature, types of defect in graphitic structures as well as affects their charge storage capacity when used as supercapacitor electrodes. This simple and versatile approach opens new opportunities for the production of potentially large batches of differently oriented and structured graphene sheets in one production run.

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preprint2017arXiv

Transfer of Vertical Graphene Nanosheets onto Flexible Substrates towards Supercapacitor Application

Vertical graphene nanosheets (VGNs) are the material of choice for next-generation electronic device applications. The growing demand for flexible devices in electronic industry brings in restriction on growth temperature of the material of interest. However, VGNs with better structural quality is usually achieved at high growth temperatures. The difficulty associated with the direct growth on flexible substrates can overcome by adopting an effective strategy of transferring the well grown VGNs onto arbitrary flexible substrates through soft chemistry route. Hence, we demonstrated a simple, inexpensive and scalable technique for the transfer of VGNs onto arbitrary substrates without disrupting its morphology and structural properties. After transfer, the morphology, chemical structure and electronic properties are analyzed by scanning electron microscopy, Raman spectroscopy and four probe resistive methods, respectively. Associated characterization investigation indicates the retention of morphological, structural and electrical properties of transferred VGNs compared to as-grown one. Furthermore the storage capacity of the VGNs transferred onto flexible substrates is also examined. A very lower sheet resistance of 0.67 kOhm/sq. and excellent supercapacitance of 158 micro-Farrad/cm2 with 91.4% retention after 2000 cycles confirms the great prospective of this damage-free transfer approach of VGNs for flexible nanoelectronic device applications

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preprint2016arXiv

A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) has been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks at C 1s spectrum that originate from non-conjugated carbon atoms in hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures.

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preprint2016arXiv

A route towards controlling the morphology of vertical graphene nanosheets

Herein, an effort has given to sheds light on the effects of plasma process parameters on the growth of vertical graphene nanosheets (VGNs) by plasma enhanced chemical vapor deposition (PECVD. The parameters include substrate temperature, microwave power and distance between plasma sources to substrate. The significant influence of these variable parameters is observed on the morphology, growth rate and crystallinity. Thus these parameters are found to be deciding factors, which determine the surface reaction and growth kinetics that governed the final structure and controlled morphology of VGNs. The activation energy of the VGNs grown by PECVD is found to be 0.57 eV. A direct evidence of vertical growth through the nanographitic island is observed from temperature dependent growth of VGNs. Such understanding on growth of VGNs is not only useful for growth mechanism under plasma chemistry but also beneficial to get controlled and desired structure for field emission and energy storage application.

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preprint2016arXiv

Influence of aqueous electrolytes on electrochemical performance of vertical graphene nanosheets supercapacitor electrode

Vertical graphene nanosheets (VGN) grown as controlled porous network are studied and demonstrated as a promising electrode material for supercapacitors. The VGN synthesized by microwave plasma enhanced chemical vapor deposition using CH4/Ar gas mixture as precursor are considered for electrochemical performance in Na2SO4, KOH, and H2SO4 to delineate the electrolyte effect. Among the electrolytes, H2SO4 exhibited excellent specific areal capacitance (188 microfarad/cm2) and good capacitance retention (96.8%). No significant change is observed in impedance spectra even after 200 cycles. An electric equivalent circuit for the system is simulated from Nyquist plot to elucidate the behavior of electrode/electrolyte interface. This potential supercapacitor electrode material is well characterized by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and contact angle measurement. Utilization of aqueous electrolytes for potential supercapacitors is also discussed in relation to improved performance observed in H2SO4 medium.

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preprint2016arXiv

Piezoelectric Domains in the AlGaN Hexagonal Microrods: Effect of Crystal Orientations

Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence study reveal the formation of AlGaN microrods in the wurtzite phase and ensures the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.

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preprint2014arXiv

Evolution and defect analysis of vertical graphene nanosheets

We report catalyst-free direct synthesis of vertical graphene nanosheets (VGNs) on SiO2/Si and quartz substrates using microwave electron cyclotron resonance - plasma enhanced chemical vapor deposition. The evolution of VGNs is studied systematically at different growth stages. Raman analysis as a function of growth time reveals that two different disorder-induced competing mechanisms contributing to the defect band intensity. The VGNs grown on SiO2/Si substrates predominantly consists of both vacancy-like and hopping defects. On the other hand, the VGNs grown on quartz substrates contain mainly boundary-like defects. XPS studies also corroborate Raman analysis in terms of defect density and vacancy-like defects for the VGNs grown on SiO2/Si substrates. Moreover, the grown VGNs exhibit a high optical transmittance from 95 to 78 % at 550 nm and the sheet resistance varies from 30 to 2.17 kohms/square depending on growth time.

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