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Researcher profile

M. Jetter

M. Jetter contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-scicond-mat.othercond-mat.supr-conquant-ph

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Published work

6 published item(s)

preprint2014arXiv

Spectroscopy of the D1-transition of cesium by dressed-state resonance fluorescence from a single (In,Ga)As/GaAs quantum dot

We use a laser-driven single (In,Ga)As quantum dot (QD) in the dressed state regime of resonance fluorescence ($T = 4$ K) to observe the four $D_1$-transition lines of alkali atomic cesium ($Cs$) vapor at room temperature. We tune the frequency of the dressing continuous-wave laser in the vicinity of the bare QD resonance $\sim 335.116$ THz ($\sim 894.592$ nm) at constant excitation power and thereby controllably tune the center and side channel frequencies of the probe light, i.e. the Mollow triplet. Resonances between individual QD Mollow triplet lines and the atomic hyperfine-split transitions are clearly identified in the $Cs$ absorption spectrum. Our results show that narrow-band (In,Ga)As QD resonance fluorescence (RF) is suitable to optically address individual transitions of the $D_1$ quadruplet without applying magnetic field or electric field tuning.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Mollow "quintuplets" from coherently-excited quantum dots

Charge-neutral excitons in semiconductor quantum dots have a small finite energy separation caused by the anisotropic exchange splitting. Coherent excitation of neutral excitons will generally excite both exciton components, unless the excitation is parallel to one of the dipole axes. We present a polaron master equation model to describe two-exciton pumping using a coherent continuous wave pump field in the presence of a realistic anisotropic exchange splitting. We predict a five-peak incoherent spectrum, thus generalizing the Mollow triplet to become a Mollow quintuplet. We experimentally confirm such spectral quintuplets for In(Ga)As quantum dots and obtain very good agreement with theory.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon-Assisted Incoherent Excitation of a Quantum Dot and its Emission Properties

We present a detailed study of a phonon-assisted incoherent excitation mechanism of single quantum dots. A spectrally-detuned laser couples to a quantum dot transition by mediation of acoustic phonons, whereby excitation efficiencies up to 20 % with respect to strictly resonant excitation can be achieved at T = 9 K. Laser frequency-dependent analysis of the quantum dot intensity distinctly maps the underlying acoustic phonon bath and shows good agreement with our polaron master equation theory. An analytical solution for the photoluminescence is introduced which predicts a broadband incoherent coupling process when electron-phonon scattering is in the strong phonon coupling (polaronic) regime. Additionally, we investigate the coherence properties of the emitted light and study the impact of the relevant pump and phonon bath parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Reducing vortex losses in superconducting microwave resonators with microsphere patterned antidot arrays

We experimentally investigate the vortex induced energy losses in niobium coplanar waveguide resonators with and without quasihexagonal arrays of nanoholes (antidots), where large-area antidot patterns have been fabricated using self-assembling microsphere lithography. We perform transmission spectroscopy experiments around 6.25 and 12.5 GHz in magnetic field cooling and zero field cooling procedures with perpendicular magnetic fields up to B=27 mT at a temperature T=4.2 K. We find that the introduction of antidot arrays into resonators reduces vortex induced losses by more than one order of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV.

0 citations0 reviewsNo code linkedOpen access