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Researcher profile

M. J. Bloemer

M. J. Bloemer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.optics

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Published work

6 published item(s)

preprint2011arXiv

A Dynamical Model of Harmonic Generation in Centrosymmetric Semiconductors

We study second and third harmonic generation in centrosymmetric semiconductors at visible and UV wavelengths in bulk and cavity environments. Second harmonic generation is due to a combination of symmetry breaking, the magnetic portion of the Lorentz force, and quadrupolar contributions that impart peculiar features to the angular dependence of the generated signals, in analogy to what occurs in metals. The material is assumed to have a non-zero, third order nonlinearity that gives rise to most of the third harmonic signal. Using the parameters of bulk Silicon we predict that cavity environments can significantly modify second harmonic generation (390nm) with dramatic improvements for third harmonic generation (266nm). This occurs despite the fact that the harmonics may be tuned to a wavelength range where the dielectric function of the material is negative: a phase locking mechanism binds the pump to the generated signals and inhibits their absorption. These results point the way to novel uses and flexibility of materials like Silicon as nonlinear media in the visible and UV ranges.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Enhancement and Inhibition of Transmission from metal gratings: Engineering the Spectral Response

We present a systematic analysis of the optical properties of slit arrays in metal films. An exhaustive investigation of geometrical and dispersive properties reveals the resonance features of these structures, including the role of surface waves and their relationship with features in the transmission spectrum. Although enhanced transmission windows are significantly dominated by the longitudinal resonances localized inside the slits, the periodicity introduces transverse resonances that can either enhance or inhibit light transmission. We thus illustrate the intriguing interaction regime between longitudinal and transverse resonances, where the two modes hybridize leading to the formation of a photonic band gap spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Second and Third Harmonic Generation in Metal-Based Nanostructures

We present a new theoretical approach to the study of second and third harmonic generation from metallic nanostructures and nanocavities filled with a nonlinear material, in the ultrashort pulse regime. We model the metal as a two-component medium, using the hydrodynamic model to describe free electrons, and Lorentz oscillators to account for core electron contributions to both the linear dielectric constant and to harmonic generation. The active nonlinear medium that may fill a metallic nanocavity, or be positioned between metallic layers in a stack, is also modeled using Lorentz oscillators and surface phenomena due to symmetry breaking are taken into account. We study the effects of incident TE- and TM-polarized fields and show that a simple re-examination of the basic equations reveals additional exploitable dynamical features of nonlinear frequency conversion in plasmonic nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The nature of transmission resonances in plasmonic metallic gratings

Using the Fourier modal method (FMM) we report our analysis of the transmission resonances of a plasmonic grating with sub-wavelength period and extremely narrow slits for wavelengths of the incoming, transverse magnetic (TM)-polarized, radiation ranging from 240nm to 1500nm and incident angles from 0 degree to 90 degree. In particular, we study the case of a silver grating placed in vacuo. Consistent with previous studies on the topic, we highlight that the main mechanism for extraordinary transmission is a TM-Fabry-Perot (FP) branch supported by waveguide modes inside each slit. The TM-FP branch may also interact with surface plasmons (SPs) at the air/Ag interface through the reciprocal lattice vectors of the grating, for periods comparable with the incoming wavelength. When the TM-FP branch crosses a SP branch, a band gap is formed along the line of the SP dispersion. The gap has a Fano-Feshbach resonance at the low frequency band edge and a ridge resonance with extremely long lifetime at the high frequency band edge. We discuss the nature of these dispersion features, and in particular we describe the ridge resonance in the framework of guided-mode resonances (GMRs). In addition, we elucidate the connection of the coupling between the TM-FP branch and SPs within the Rayleigh condition. We also study the peculiar characteristics of the field localization and the energy transport in two topical examples.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Extraordinary Transmission in the UV Range from Sub-wavelength Slits on Semiconductors

In this paper we describe a way to achieve the extraordinary transmission regime from sub-wavelength slits carved on semiconductor substrates. Unlike metals, the dielectric permittivity of typical semiconductors like GaAs or GaP is negative beginning in the extreme UV range (lambda <= 270nm). We show that the metal-like response of bulk semiconductors exhibits surface plasmon waves that lead to extraordinary transmission in the UV and soft X-ray ranges. The importance of realistic material response versus perfect conductors is also discussed. These findings may be important in high resolution photo-lithography, near field optical devices and ultra high density optical storage.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and super-guiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallo-dielectric photonic band gap structures. The exploita-tion of this basic property in semiconductors raises the possibility of new, yet-untapped ap-plications in the UV and soft x-ray ranges.

0 citations0 reviewsNo code linkedOpen access