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Researcher profile

M. Inglot

M. Inglot contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

8 published item(s)

preprint2022arXiv

Random spin-orbit gates in the system of a Topological insulator and a Quantum dot

The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged Rényi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced photogalvanic effect in graphene due to Rashba spin-orbit coupling

We analyze theoretically optical generation of a spin-polarized charge current (photogalvanic effect) and spin polarization in graphene with Rashba spin-orbit coupling. An external magnetic field is applied in the graphene plane, which plays a crucial role in the mechanism of current generation. We predict a highly efficient resonant-like photogalvanic effect in a narrow frequency range which is determined by the magnetic field. A relatively less efficient photogalvanic effect appears in a broader frequency range, determined by the electron concentration and spin-orbit coupling strength.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermoelectric and thermospin transport in a ballistic junction of graphene

We consider theoretically a wide graphene ribbon, that on both ends is attached to electronic reservoirs which generally have different temperatures. The graphene ribbon is assumed to be deposited on a substrate, that leads to a spin-orbit coupling of Rashba type. We calculate the thermally induced charge current in the ballistic transport regime as well as the thermoelectric voltage (Seebeck effect). Apart from this, we also consider thermally induced spin current and spin polarization of the graphene ribbon. The spin currents are shown to have generally two components; one parallel to the temperature gradient and the other one perpendicular to this gradient. The latter corresponds to the spin current due to the spin Nernst effect. Additionally, we also consider the heat current between the reservoirs due to transfer of electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Optical spin injection in graphene with Rashba spin-orbit interaction

We calculate the efficiency of infrared optical spin injection in single-layer graphene with Rashba spin-orbit coupling and for in-plane magnetic field. The injection rate in the photon frequency range corresponding to the Rashba splitting is shown to be proportional to the ratio of the Zeeman and Rashba splittings. As a result, large spin polarization can be controllably achieved for experimentally available values of the spin-orbit coupling and in magnetic fields below 10 Tesla.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermally-induced spin polarization of a two dimensional electron gas

Spin polarization of a two-dimensional electron gas with Rashba spin-orbit interaction, induced by a thermo-current, is considered theoretically. It is shown that a temperature gradient gives rise to an in-plane spin polarization of the electron gas, which is normal to the temperature gradient. The low-temperature spin polarization changes sign when the Fermi level crosses bottom edge of the upper electronic subband. We also compare the results with spin polarization induced by an external electric field (current).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field

We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimensional nonmagnetic electron system leads to a negative magnetoresistance arising solely due to spin-dependent effects.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Indirect Interaction of Magnetic Domain Walls

We calculate the electron-mediated exchange interaction between two domain walls in magnetic wires. This corresponds to the equilibrium regime and, therefore, the interaction can be additionally controlled by an electric current. The exchange interaction is long ranged and oscillates as a function of the distance between the walls. It also depends oscillatory on the polarization angle of the walls, having the maximum value for collinear polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Robust to impurity-scattering spin Hall effect in two-dimensional electron gas

We propose a mechanism of spin Hall effect in two-dimensional electron gas with spatially random Rashba spin-orbit interaction. The calculations based on the Kubo formalism and kinetic equation show that in contrast to the constant spin-orbit coupling, spin Hall conductivity in the random spin-orbit field is not totally suppressed by the potential impurity scattering. Even if the regular contribution is removed by the vertex corrections, the terms we consider, remain. Therefore, the intrinsic spin-Hall effect exists being, however, non-universal.

0 citations0 reviewsNo code linkedOpen access