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M. H. Shangguan

M. H. Shangguan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2013arXiv

Double exchange model on triangular lattice: non-coplanar spin configuration and phase transition near quarter filling

Unconventional anomalous Hall effect in frustrated pyrochlore oxides is originated from spin chirality of non-coplanar localized spins, which can also be induced by the competition between ferromagnetic (FM) double exchange interaction $J_{H}$ and antiferromagnetic superexchange interaction $J_{AF}$. Here truncated polynomial expansion method and Monte Carlo simulation are adopted to investigate the above model on two-dimensional triangular lattice. We discuss the influence of the range of FM-type spin-spin correlation and strong electron-spin correlation on the truncation error of spin-spin correlation near quarter filling. Two peaks of the probability distribution of spin-spin correlation in non-coplanar spin configuration clearly show that non-coplanar spin configuration is an intermediate phase between FM and 120-degree spin phase. Near quarter filling, there is a phase transition from FM into non-coplanar and further into 120-degree spin phase when $J_{AF}$ continually increases. Finally the effect of temperature on magnetic structure is discussed.

preprint2012arXiv

Effect of disorder with long-range correlation on transport in graphene nanoribbon

Transport in disordered armchair graphene nanoribbons (AGR) with long-range correlation between quantum wire contact is investigated by transfer matrix combined with Landauer's formula. Metal-insulator transition is induced by disorder in neutral AGR. Thereinto, the conductance is one conductance quantum for metallic phase and exponentially decays otherwise when the length of AGR is infinity and far longer than its width. Similar to the case of long-range disorder, the conductance of neutral AGR first increases and then decreases while the conductance of doped AGR monotonically decreases, as the disorder strength increases. In the presence of strong disorder, the conductivity depends monotonically and non-monotonically on the aspect ratio for heavily doped and slightly doped AGR respectively.