BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

M. H. D. Guimarães

M. H. D. Guimarães appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

Catalog footprint

What is connected

9works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2024arXiv

Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect

Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba Edelstein effect efficiencies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonlinear analog spintronics with van der Waals heterostructures

The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and measure up to 4th harmonic spin-signals via nonlocal spin-valve and Hanle spin-precession measurements. We demonstrate its application for analog signal processing over pure spin-signals such as amplitude modulation and heterodyne detection operations which require nonlinearity as an essential element. Furthermore, we show that the presence of nonlinearity in the spin-signal has an amplifying effect on the energy-dependent conductivity induced nonlinear spin-to-charge conversion effect. The interaction of the two spin-dependent nonlinear effects in the spin transport channel leads to a highly efficient detection of the spin-signal without using ferromagnets. These effects are measured both at 4K and room temperature, and are suitable for their applications as nonlinear circuit elements in the fields of advanced-spintronics and spin-based neuromorphic computing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Contact induced spin relaxation in Hanle spin precession measurements

In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride

We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 μm at room temperature, the largest distance measured so far for graphene. Due to enhanced charge carrier diffusion, spin relaxation lengths are measured up to 4.5 μm. The relaxation times are similar to values for lower quality SiO$_2$ based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Hall transport as a probe of capacitance profile at graphene edges

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin transport in high quality suspended graphene devices

We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Comparison between charge and spin transport in few layer graphene

Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article we present 4-probe local charge transport and non-local spin valve and spin precession measurements on lateral spin field-effect transistors (FET) on FLG. We study systematically the charge and spin transport properties depending on the number of layers and the electrical back gating of the device. We explain the charge transport measurements by taking the screening of scattering potentials into account and use the results to understand the spin data. The measured samples are between 3 and 20 layers thick and we include in our analysis our earlier results of the measurements on SLG for comparison. In our room temperature spin transport measurements we manage to observe spin signals over distances up to 10 u m and measure spin-relaxation times up to tau_s ~500 ps, about 4 times higher than in SLG. We calculate the density of states (DOS) of FLG using a zone-folding scheme to determine the charge diffusion coefficient D_C from the square resistance R_S. The resulting D_C and the spin diffusion coefficient D_S show similar values and depend only weakly on the number of layers and gate induced charge carriers. We discuss the implications of this on the identification of the spin-relaxation mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Group theory analysis of electrons and phonons in N-layer graphene systems

In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in the presence of an applied electric field are also discussed.

0 citations0 reviewsNo code linkedOpen access