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M. Gurioli

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other physics.optics quant-ph

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preprint2022arXiv

Purcell effect with extended sources: The role of the cross density of states

We analyze the change in the spontaneous decay rate, or Purcell effect, of an extended quantum emitter in a structured photonic environment. Based on a simple theory, we show that the cross-density of states is the central quantity driving interferences in the emission process. Using numerical simulations in realistic photonic cavity geometries, we demonstrate that a structured cross-density of states can induce subradiance or superradiance, and change subtantially the emission spectrum. Interestingly, the spectral lineshape of the Purcell effect of an extended source cannot be predicted from the sole knowledge of the spectral dependence of the local density of states.

preprint2020arXiv

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.

preprint2012arXiv

Large K-exciton dynamics in GaN epilayers: the non-thermal and thermal regime

We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of LO-phonon replicas is used to address the energy relaxation in the excitonic band. From ps time-resolved spectra we bring evidence for a long lasting non-thermal excitonic distribution which accounts for the rst 50 ps. Such a behavior is con rmed in di erent experimental conditions, both when non-resonant and resonant excitation are used. At low excitation power density the exciton formation and their subsequent thermalization is dominated by impurity scattering rather than by acoustic phonon scattering. The estimate of the average energy of the excitons as a function of delay after the excitation pulse provides information on the relaxation time, which describes the evolution of the exciton population to the thermal regime.