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M. Gschrey

M. Gschrey appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2015arXiv

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature- Dependent Hong-Ou-Mandel Experiments

We probe the indistinguishability of photons emitted by a semiconductor quantum dot (QD) via time- and temperature- dependent two-photon interference (TPI) experiments. An increase in temporal-separation between consecutive photon emission events, reveals a decrease in TPI visibility on a nanosecond timescale, theoretically described by a non-Markovian noise process in agreement with fluctuating charge-traps in the QD's vicinity. Phonon-induced pure dephasing results in a decrease in TPI visibility from $(96\pm4)\,$\% at 10\,K to a vanishing visibility at 40\,K. In contrast to Michelson-type measurements, our experiments provide direct access to the time-dependent coherence of a quantum emitter at a nanosecond timescale.

preprint2013arXiv

In-situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-um mesa-structures are exactly defined by high-resolution electron-beam lithography and subsequent etching in the second step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the high optical quality of the single-QD mesa-structures with emission linewidths below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment precision better than 100 nm which paves the way for a fully-deterministic device technology using in-situ CL lithography.