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A. Strittmatter

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cond-mat.mes-hall quant-ph

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preprint2016arXiv

Impact of phonons on dephasing of individual excitons in deterministic quantum dot microlenses

Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in-situ electron beam lithography combined with a low-temperature cathodoluminescence imaging, we deterministically fabricate microlenses above selected InAs quantum dots (QDs) achieving their efficient coupling to the external light field. This enables to perform four-wave mixing micro-spectroscopy of single QD excitons, revealing the exciton population and coherence dynamics. We infer the temperature dependence of the dephasing in order to address the impact of phonons on the decoherence of confined excitons. The loss of the coherence over the first picoseconds is associated with the emission of a phonon wave packet, also governing the phonon background in photoluminescence (PL) spectra. Using theory based on the independent boson model, we consistently explain the initial coherence decay, the zero-phonon line fraction, and the lineshape of the phonon-assisted PL using realistic quantum dot geometries.

preprint2015arXiv

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature- Dependent Hong-Ou-Mandel Experiments

We probe the indistinguishability of photons emitted by a semiconductor quantum dot (QD) via time- and temperature- dependent two-photon interference (TPI) experiments. An increase in temporal-separation between consecutive photon emission events, reveals a decrease in TPI visibility on a nanosecond timescale, theoretically described by a non-Markovian noise process in agreement with fluctuating charge-traps in the QD's vicinity. Phonon-induced pure dephasing results in a decrease in TPI visibility from $(96\pm4)\,$\% at 10\,K to a vanishing visibility at 40\,K. In contrast to Michelson-type measurements, our experiments provide direct access to the time-dependent coherence of a quantum emitter at a nanosecond timescale.

preprint2015arXiv

Generating single photons at GHz modulation-speed using electrically controlled quantum dot microlenses

We report on the generation of single-photon pulse trains at a repetition rate of up to 1 GHz. We achieve this high speed by modulating the external voltage applied on an electrically contacted quantum dot microlens, which is optically excited by a continuous-wave laser. By modulating the photoluminescence of the quantum dot microlens using a square-wave voltage, single-photon emission is triggered with a response time as short as 270 ps being 6.5 times faster than the radiative lifetime of 1.75 ns. This large reduction in the characteristic emission time is enabled by a rapid capacitive gating of emission from the quantum dot placed in the intrinsic region of a p-i-n-junction biased below the onset of electroluminescence. Here, the rising edge of the applied voltage pulses triggers the emission of single photons from the optically excited quantum dot. The non-classical nature of the photon pulse train generated at GHz-speed is proven by intensity autocorrelation measurements. Our results combine optical excitation with fast electrical gating and thus show promise for the generation of indistinguishable single photons at high rates, exceeding the limitations set by the intrinsic radiative lifetime.

preprint2013arXiv

In-situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-um mesa-structures are exactly defined by high-resolution electron-beam lithography and subsequent etching in the second step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the high optical quality of the single-QD mesa-structures with emission linewidths below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment precision better than 100 nm which paves the way for a fully-deterministic device technology using in-situ CL lithography.