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Published work
A simple pathway to grow thin films of N-doped MgO (MgO:N), which has been found experimentally to be a ferromagnetic d0 insulator, is presented. It relies on the catalytic properties of a Mo(001) substrate using growth of Mg in a mixed atmosphere of O2 and N2. Scanning tunneling spectroscopy reveals that the films are insulating and exhibit an N-induced state slightly below the conduction band minimum.
Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a spin polarization of the occupied Dirac cone states of 80-90%, which is in reasonable agreement with the experimental data after careful background subtraction. Furthermore, we observe a strongly spin-orbit split surface band at lower energy. This state is found at 0.8eV below the Fermi level at the gamma-point, disperses upwards, and disappears at about 0.4eV below the Fermi level into two different bulk bands. Along the gamma-K direction, the band is located within a spin-orbit gap. According to an argument given by Pendry and Gurman in 1975, such a gap must contain a surface state, if it is located away from the high symmetry points of the Brillouin zone. Thus, the novel spin-split state is protected by symmetry, too.
Ultrathin MgO films on Mo(100) with a thickness up to 12 ML are studied by scanning tunneling microscopy and spectroscopy at room temperature. The spatial variation of the work function within the MgO film is mapped by field emission resonance states (Gundlach oscillations) using dz/dU spectroscopy. We found circular spots with significantly reduced work function (DeltaPhi=0.6 eV), which are assigned to charged defects within the MgO film. On top of the MgO films, small Co cluster are deposited with an average contact area of 4 nm^2. These islands exhibit Coulomb oscillations in dI/dU spectra at room temperature. Good agreement with orthodox theory is achieved showing variations of the background charge Q_0 for islands at different positions, which are in accordance with the work function differences determined by the Gundlach oscillations.