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M. Pratzer

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Published work

7 published item(s)

preprint2014arXiv

Preferential antiferromagnetic coupling of vacancies in graphene on SiO_2: Electron spin resonance and scanning tunneling spectroscopy

Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of defects visible in scanning tunneling microscopy (STM) is considerably lower than the ion fluence implying that most of the defects are single vacancies. The vacancies are characterized by scanning tunneling spectroscopy (STS) on graphene and HOPG exhibiting a peak close to the Fermi level. The peak persists after air exposure up to 180 min, albeit getting broader. After air exposure for less than 60 min, electron spin resonance (ESR) at 9.6 GHz is performed. For an ion flux of 10/nm^2, we find a signal corresponding to a g-factor of 2.001-2.003 and a spin density of 1-2 spins/nm^2. The ESR signal consists of a mixture of a Gaussian and a Lorentzian of equal weight exhibiting a width down to 0.17 mT, which, however, depends on details of the sample preparation. The g-factor anisotropy is about 0.02%. Temperature dependent measurements reveal antiferromagnetic correlations with a Curie-Weiss temperature of -10 K. Albeit the electrical conductivity of graphene is significantly reduced by ion bombardment, the spin resonance induced change in conductivity is below 10^{-5}.

preprint2012arXiv

Catalytic Growth of N-doped MgO on Mo(001)

A simple pathway to grow thin films of N-doped MgO (MgO:N), which has been found experimentally to be a ferromagnetic d0 insulator, is presented. It relies on the catalytic properties of a Mo(001) substrate using growth of Mg in a mixed atmosphere of O2 and N2. Scanning tunneling spectroscopy reveals that the films are insulating and exhibit an N-induced state slightly below the conduction band minimum.

preprint2012arXiv

Wave function mapping in graphene quantum dots with soft confinement

Using low-temperature scanning tunneling spectroscopy, we map the local density of states (LDOS) of graphene quantum dots supported on Ir(111). Due to a band gap in the projected Ir band structure around the graphene K point, the electronic properties of the QDs are dominantly graphene-like. Indeed, we compare the results favorably with tight binding calculations on the honeycomb lattice based on parameters derived from density functional theory. We find that the interaction with the substrate near the edge of the island gradually opens a gap in the Dirac cone, which implies soft-wall confinement. Interestingly, this confinement results in highly symmetric wave functions. Further influences of the substrate are given by the known moir{é} potential and a 10% penetration of an Ir surface resonance

preprint2011arXiv

Probing electron-electron interaction in quantum Hall systems with scanning tunneling spectroscopy

Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled from p-doped bulk states and exhibits spreading resistance within the insulating quantum Hall phases. In quantitative agreement with calculations we find an exchange enhancement of the spin splitting. Moreover, we observe that both the spatially averaged as well as the local density of states feature a characteristic Coulomb gap at the Fermi level. These results show that electron-electron interaction effects can be probed down to a resolution below all relevant length scales.

preprint2010arXiv

Gundlach oscillations and Coulomb blockade of Co nano-islands on MgO/Mo(100) investigated by scanning tunneling spectroscopy at 300 K

Ultrathin MgO films on Mo(100) with a thickness up to 12 ML are studied by scanning tunneling microscopy and spectroscopy at room temperature. The spatial variation of the work function within the MgO film is mapped by field emission resonance states (Gundlach oscillations) using dz/dU spectroscopy. We found circular spots with significantly reduced work function (DeltaPhi=0.6 eV), which are assigned to charged defects within the MgO film. On top of the MgO films, small Co cluster are deposited with an average contact area of 4 nm^2. These islands exhibit Coulomb oscillations in dI/dU spectra at room temperature. Good agreement with orthodox theory is achieved showing variations of the background charge Q_0 for islands at different positions, which are in accordance with the work function differences determined by the Gundlach oscillations.

preprint2010arXiv

Scanning tunneling spectroscopy of a dilute two-dimensional electron system exhibiting Rashba spin splitting

Using scanning tunneling spectroscopy (STS) at 5 K in B-fields up to 7 T, we investigate the local density of states of a two-dimensional electron system (2DES) created by Cs adsorption on p-type InSb(110). The 2DES, which in contrast to previous STS studies exhibits a 2D Fermi level, shows standing waves at B = 0 T with corrugations decreasing with energy and with wave numbers in accordance with theory. In magnetic field percolating drift states are observed within the disorder broadened Landau levels. Due to the large electric field perpendicular to the surface, a beating pattern of the Landau levels is found and explained quantitatively by Rashba spin splitting within the lowest 2DES subband. The Rashba splitting does not contribute significantly to the standing wave patterns in accordance with theory.

preprint2009arXiv

Bistability and oscillatory motion of natural nano-membranes appearing within monolayer graphene on silicon dioxide

The recently found material graphene is a truly two-dimensional crystal and exhibits, in addition, an extreme mechanical strength. This in combination with the high electron mobility favours graphene for electromechanical investigations down to the quantum limit. Here, we show that a monolayer of graphene on SiO2 provides natural, ultra-small membranes of diameters down to 3 nm, which are caused by the intrinsic rippling of the material. Some of these nano-membranes can be switched hysteretically between two vertical positions using the electric field of the tip of a scanning tunnelling microscope (STM). They can also be forced to oscillatory motion by a low frequency ac-field. Using the mechanical constants determined previously, we estimate a high resonance frequency up to 0.4 THz. This might be favorable for quantum-electromechanics and is prospective for single atom mass spectrometers.