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M. Gobbi

M. Gobbi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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3 published item(s)

preprint2020arXiv

Absence of ferromagnetism in VSe$_2$ caused by its charge density wave phase

How magnetism emerges in low-dimensional materials such as transition metal dichalcogenides at the monolayer limit is still an open question. Herein, we present a comprehensive study of the magnetic properties of single crystal and monolayer VSe$_{2}$, both experimentally and \emph{ab initio}. Magnetometry, X-ray magnetic circular dichrosim (XMCD) and \emph{ab initio} calculations demonstrate that the charge density wave in bulk stoichiometric VSe$_{2.0}$ causes a structural distortion with a strong reduction in the density of sates at the Fermi level, prompting the system towards a non-magnetic state but on the verge of a ferromagnetic instability. In the monolayer limit, the structural rearrangement induces a Peierls distortion with the opening of an energy gap at the Fermi level and the absence of magnetic order. Control experiments on defect-induced VSe$_{2-δ}$ single crystals show a breakdown of magnetism, discarding vacancies as a possible origin of magnetic order in VSe$_{2}$.

preprint2009arXiv

On-chip manipulation of magnetic nanoparticles through domain walls conduits

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule carriers or labels, the accurate control over the handling of the single magnetic nanoparticle is crucial for several applications including single molecule manipulation, separation, cells manipulation and biomagnetic sensing.

preprint2009arXiv

On-chip nano-manipulation of magnetic particles via domain walls conduits

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule labels in several applications - including single molecule manipulation, separation, cells manipulation and biomagnetic sensing, the accurate control over the handling of the single magnetic nanoparticles becomes crucial as it may reflect the handling of the single molecules. The approach described here opens the path to the implementation and design of nano-transport lines, with application to single molecule study and lab-on-chip devices. In perspective, the easy integration on chip with sensors of domain walls and particles will allow for the realization of programmable circuits for molecular manipulation with continuous control of the desired process.