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M. Foerster

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.comp-ph

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preprint2022arXiv

Micromagnetics of magnetic chemical modulations in soft-magnetic cylindrical nanowires

We analyze the micromagnetics of short longitudinal modulations of a high-magnetization material in cylindrical nanowires made of a soft-magnetic material of lower magnetization such as permalloy, combining magnetic microscopy, analytical modeling, and micromagnetic simulations. The mismatch of magnetization induces curling of magnetization around the axis in the modulations, in an attempt to screen the interfacial magnetic charges. The curling angle increases with modulation length, until a plateau is reached with nearly full charge screening for a specific length scale~$Δ_\mathrm{mod}$, larger than the dipolar exchange length of any of the two materials. The curling circulation can be switched by the Oersted field arising from a charge current with typical magnitude $10^{12} A/m^{2}$ for a diameter of $\sim$100 nm, and reaching a maximum for $Δ_\mathrm{mod}$.

preprint2021arXiv

Domain wall automotion in three-dimensional magnetic helical interconnectors

The fundamental limits currently faced by traditional computing devices necessitate the exploration of new ways to store, compute and transmit information. Here, we propose a three-dimensional (3D) magnetic interconnector that exploits geometry-driven automotion of domain walls (DWs), for the transfer of magnetic information between functional magnetic planes. By combining state-of-the-art 3D nanoprinting and standard physical vapor deposition, we prototype 3D helical DW conduits. We observe the automotion of DWs by imaging their magnetic state under different field sequences using X-ray microscopy, observing a robust unidirectional motion of DWs from the bottom to the top of the spirals. From experiments and micromagnetic simulations, we determine that the large thickness gradients present in the structure are the main mechanism for 3D DW automotion. We obtain direct evidence of how this tailorable magnetic energy gradient is imprinted in the devices, and how it competes with pinning effects due to local changes in the energy landscape. Our work also predicts how this effect could lead to high DW velocities, reaching the Walker limit during automotion. This work provides new possibilities for efficient transfer of magnetic information in three dimensions.

preprint2020arXiv

Influence of the growth conditions on the magnetism of SrFe$_{12}$O$_{19}$ thin films and the behavior of Co / SrFe$_{12}$O$_{19}$ bilayers

SrFe$_{12}$O$_{19}$ (SFO) films grown on Si (100) substrates by radio-frequency magnetron sputtering have been characterized in terms of composition, structural and magnetic properties by a combination of microscopy, diffraction and spectroscopy techniques. Mössbauer spectroscopy was used to determine the orientation of the films magnetization, which was found to be controlled by both the sputtering power and the thickness of the films. Additionally, the coupling between the SFO films and a deposited cobalt overlayer was studied by means of synchrotron-based spectromicroscopy techniques. A structural coupling at the SFO/Co interface is suggested to account for the expetimental observations. Micromagnetic simulations were performed in order to reproduce the experimental behaviour of the system.

preprint2016arXiv

An invisible non-volatile solid-state memory

Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.

preprint2016arXiv

Morphology and chemical composition of cobalt germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology

The reactive growth of cobalt germanide on Ge(001) was investigated by means of in-situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction ($μ$-LEED), and ex-situ atomic force microscopy (AFM). At a Co deposition temperature of 670°C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. Combining XAS-PEEM and $μ$-LEED, we were able to identify a large part of the islands to consist of CoGe$_2$, with many of them having an unusual epitaxial relationship: CoGe$_2$[$\bar110$](111) $\parallel$ Ge[$\bar110$](001). Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co$_5$Ge$_7$ and CoGe. The occurrence of these intermediate phases is promoted by defects, as revealed by comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates.

preprint2014arXiv

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems.