Source author record

M. Finazzi

M. Finazzi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

Catalog footprint

What is connected

6works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2019arXiv

Spin-orbitronics at a topological insulator-semiconductor interface

Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.

preprint2016arXiv

Monolithic AlGaAs second-harmonic nanoantennas

We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical anoantennas. Using a selective oxidation technique, we fabricate such epitaxial semiconductor nanoparticles on an aluminum oxide substrate. Second harmonic generation from an AlGaAs nanocylinder of height h=400 nm and varying radius pumped with femtosecond pulses delivered at 1554-nm wavelength has been measured, revealing a peak conversion efficiency exceeding 10-5 for nanocylinders with an otpimized geometry.

preprint2015arXiv

Valley and spin dynamics in monolayer MoS$_{2}$

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers of transition metal dichalcogenides (TMDs) the lack of inversion symmetry, combined with a large spin-orbit interaction, leads to a conduction (valence) band with different spin-polarized minima (maxima) having equal energies. This offers the opportunity to manipulate information at the level of the charge (electrons or holes), spin (up or down) and crystal momentum (valley). Any implementation of these concepts, however, needs to consider the robustness of such degrees of freedom, which are deeply intertwined. Here we address the spin and valley relaxation dynamics of both electrons and holes with a combination of ultrafast optical spectroscopy techniques, and determine the individual characteristic relaxation times of charge, spin and valley in a MoS$_{2}$ monolayer. These results lay the foundations for understanding the mechanisms of spin and valley polarization loss in two-dimensional TMDs: spin/valley polarizations survive almost two-orders of magnitude longer for holes, where spin and valley dynamics are interlocked, than for electrons, where these degrees of freedom are decoupled. This may lead to novel approaches for the integration of materials with large spin-orbit in robust spintronic/valleytronic platforms.

preprint2014arXiv

Spin photovoltaic cell

Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be powered by a spin voltage generator able to drive spins out of equilibrium and produce two spatially well-separated populations with opposite spin orientation. Such a generator should work at room temperature, be highly integrable with existing semiconductor technology, and work with neither ferromagnetic materials nor externally applied magnetic fields. We have matched these requirements by realizing the spintronic equivalent of a photovoltaic cell. While the latter spatially separates photoexcited electron and hole charges, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite spin. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). This allows creating a light diffraction pattern with spatially-modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules.

preprint2013arXiv

Laser-Induced Magnetic Nanostructures with Tunable Topological Properties

We report the creation and real-space observation of magnetic structures with well-defined topological properties and a lateral size as low as about 150 nm. They are generated in a thin ferrimagnetic film by ultrashort single optical laser pulses. Thanks to their topological properties, such structures can be classified as Skyrmions of a particular type that does not require an externally applied magnetic field for stabilization. Besides Skyrmions, we are able to generate magnetic features with topological characteristics that can be tuned by changing the laser fluence. The stability of such features is accounted for by an analytical model based on the interplay between the exchange and the magnetic dipole-dipole interactions

preprint2012arXiv

Dynamics of four-photon photoluminescence in gold nanoantennas

Two-pulse correlation is employed to investigate the temporal dynamics of both two-photon photoluminescence (2PPL) and four-photon photoluminescence (4PPL) in resonant and nonresonant nanoantennas excited at a wavelength of 800 nm. Our data are consistent with the same two-step model being the cause of both 4PPL and 2PPL, implying that the first excitation step in 4PPL is a three-photon sp->sp direct interband transition. Considering energy and parity conservation, we also explain why 4PPL behavior is favored over three-and five-photon photoluminescence in the power range below the damage threshold of our antennas. Since sizeable 4PPL requires larger peak intensities of the local field, we are able to select either 2PPL or 4PPL in the same gold nanoantennas by choosing a suitable laser pulse duration. We thus provide a first consistent model for the understanding of multiphoton photoluminescence generation in gold nanoantennas, opening new perspectives for applications ranging from the characterization of plasmonic resonances to biomedical imaging.