BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

M. Fernando Gonzalez-Zalba

M. Fernando Gonzalez-Zalba contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phquant-ph

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2026arXiv

A current source with metrological precision made on a 300mm silicon MOS process

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such sources must be operated in parallel to provide practically useful values of current in the nanoampere range. Achieving a single electron source using an industrial grade 300 mm wafer silicon metal oxide semiconductor (MOS) process could offer a powerful route for scaling, combined with the ability for integration with control and measurement electronics. Here, we present measurements of such a single-electron source indicating an error rate of 0.008 ppm, below the error threshold to satisfy the SI Ampere, and one of the lowest error rates reported, implemented using a gate-defined quantum dot device fabricated on an industry-grade silicon MOS process. Further evidence supporting the accuracy of the device is obtained by comparing the device performance to established models of quantum tunnelling, which reveal the mechanism of operation of our source at the single particle level. The low error rate observed in this device motivates the development of scaled arrays of parallel sources utilising Si MOS devices to realise a new generation of metrologically accurate current standards.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures

In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance and subthreshold slope with respect to 300 K. In the quantum regime, all measured devices show Coulomb blockade. This is explained by the formation of quantum dots in the channel, for which a model is proposed. The variability in parameters, important for quantum computing scaling, is also quantified. Our results show that bulk 40-nm node MOSFETs can be readily used for the co-integration of cryo-CMOS classical-quantum circuits at deep cryogenic temperatures and that the variability approaches the uniformity requirements to enable shared control.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

An Exchange-Coupled Donor Molecule in Silicon

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single impurity atom [8, 9] allowing the predicted single-donor energy spectrum to be checked by an electrical transport measurement. Generalizing the concept, a donor pair may behave as a hydrogen molecule analogue. However, the molecular quantum mechanical solution only takes us so far and a detailed understanding of the electronic structure of these molecular systems is a challenge to be overcome. Here we present a combined experimental-theoretical demonstration of the energy spectrum of a strongly interacting donor pair in the channel of a silicon nanotransistor and show the first observation of measurable two-donor exchange coupling. Moreover, the analysis of the three charge states of the pair shows evidence of a simultaneous enhancement of the binding and charging energies with respect to the single donor spectrum. The measured data are accurately matched by results obtained in an effective mass theory incorporating the Bloch states multiplicity in Si, a central cell corrected donor potential and a full configuration interaction treatment of the 2-electron spectrum. Our data describe the basic 2-qubit entanglement element in Kane's quantum processing scheme [1], namely exchange coupling, implemented here in the range of molecular hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A hybrid double-dot in silicon

We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.

0 citations0 reviewsNo code linkedOpen access