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Andrew J. Ferguson

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cond-mat.mes-hall physics.app-ph quant-ph

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preprint2020arXiv

Solar Thermoradiative-Photovoltaic Energy Conversion

We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its emitted light is absorbed by the photovoltaic cell to provide an additional photocurrent. Based on the principle of detailed balance, we calculate a limiting solar conversion efficiency of 85% for fully concentrated sunlight and 45% for one sun with an absorber and single-junction cells of equal areas. Ideal and nonideal solar thermoradiative-photovoltaic systems outperform solar thermophotovoltaic converters for low bandgaps and practical absorber temperatures. Their performance enhancement results from a high tolerance to nonradiative generation/recombination and an ability to minimize radiative heat losses. We show that a realistic device with all major losses could achieve increases in solar conversion efficiency by up to 7.9% (absolute) compared to a solar thermophotovoltaic device under low optical concentration. Our results indicate that these converters could serve as efficient heat engines for low cost single axis tracking systems.

preprint2016arXiv

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

preprint2013arXiv

An Exchange-Coupled Donor Molecule in Silicon

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single impurity atom [8, 9] allowing the predicted single-donor energy spectrum to be checked by an electrical transport measurement. Generalizing the concept, a donor pair may behave as a hydrogen molecule analogue. However, the molecular quantum mechanical solution only takes us so far and a detailed understanding of the electronic structure of these molecular systems is a challenge to be overcome. Here we present a combined experimental-theoretical demonstration of the energy spectrum of a strongly interacting donor pair in the channel of a silicon nanotransistor and show the first observation of measurable two-donor exchange coupling. Moreover, the analysis of the three charge states of the pair shows evidence of a simultaneous enhancement of the binding and charging energies with respect to the single donor spectrum. The measured data are accurately matched by results obtained in an effective mass theory incorporating the Bloch states multiplicity in Si, a central cell corrected donor potential and a full configuration interaction treatment of the 2-electron spectrum. Our data describe the basic 2-qubit entanglement element in Kane's quantum processing scheme [1], namely exchange coupling, implemented here in the range of molecular hybridization.

preprint2011arXiv

A hybrid double-dot in silicon

We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.