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Researcher profile

M. Farmanbar

M. Farmanbar contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2016arXiv

Coulomb drag in anisotropic systems: a theoretical study on a double-layer phosphorene

We theoretically study the Coulomb drag resistivity in a double-layer electron system with highly anisotropic parabolic band structure using Boltzmann transport theory. As an example, we consider a double-layer phosphorene on which we apply our formalism. This approach, in principle, can be tuned for other double-layered systems with paraboloidal band structures. Our calculations show the rotation of one layer with respect to another layer can be considered a way of controlling the drag resistivity in such systems. As a result of rotation, the off-diagonal elements of drag resistivity tensor have non-zero values at any temperature. In addition, we show that the anisotropic drag resistivity is very sensitive to the direction of momentum transfer between two layers due to highly anisotropic inter-layer electron-electron interaction and also the plasmon modes. In particular, the drag anisotropy ratio, \r{ho}yy/\r{ho}xx, can reach up to ~ 3 by changing the temperature. Furthermore,our calculations suggest that including the local field correction in dielectric function changes the results significantly. Finally, We examine the dependence of drag resistivity and its anisotropy ratio on various parameters like inter-layer separation, electron density, short-range interaction and insulating substrate/spacer.

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preprint2016arXiv

Ohmic contacts to 2D semiconductors through van der Waals bonding

High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. We show that (i) one can remove the interface states by covering the metal by a 2D layer, which is van der Waals-bonded to the MX2 layer, and (ii) one can choose the buffer layer such, that it yields a p-type contact with a zero Schottky barrier height. We identify possible buffer layers such as graphene, a monolayer of h-BN, or an oxide layer with a high electron affinity, such as MoO3. The most elegant solution is a metallic M'X'2 layer with a high work function. A NbS2 monolayer adsorbed on a metal yields a high work function contact, irrespective of the metal, which gives a barrierless contact to all MX2 layers.

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preprint2015arXiv

A first-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces

We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between MoS2 and a metal surface, and obtain reliable interface potential steps and Schottky barriers. Special care is taken to construct interface structures that have a mismatch between the MoS2 and the metal lattices of <1%. MoS2 is chemisorbed on the early transition metal Ti, which leads to a strong perturbation of its (electronic) structure and a pinning of the Fermi level 0.54 eV below the MoS2 conduction band due to interface states. MoS2 is physisorbed on Au, where the bonding hardly perturbs the electronic structure. The bonding of MoS2 on other metals lies between these two extreme cases, with interface interactions for the late 3d transition metals Co, Ni, Cu and the simple metal Mg that are somewhat stronger than for the late 4d/5d transition metals Pd, Ag, Pt and the simple metal Al. Even a weak interaction, such as in the case of Al, gives interface states, however, with energies inside the MoS2 band gap, which pin the Fermi level below the conduction band.

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