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Researcher profile

G. Brocks

G. Brocks contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat

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Published work

6 published item(s)

preprint2016arXiv

Ohmic contacts to 2D semiconductors through van der Waals bonding

High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. We show that (i) one can remove the interface states by covering the metal by a 2D layer, which is van der Waals-bonded to the MX2 layer, and (ii) one can choose the buffer layer such, that it yields a p-type contact with a zero Schottky barrier height. We identify possible buffer layers such as graphene, a monolayer of h-BN, or an oxide layer with a high electron affinity, such as MoO3. The most elegant solution is a metallic M'X'2 layer with a high work function. A NbS2 monolayer adsorbed on a metal yields a high work function contact, irrespective of the metal, which gives a barrierless contact to all MX2 layers.

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preprint2015arXiv

A first-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces

We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between MoS2 and a metal surface, and obtain reliable interface potential steps and Schottky barriers. Special care is taken to construct interface structures that have a mismatch between the MoS2 and the metal lattices of <1%. MoS2 is chemisorbed on the early transition metal Ti, which leads to a strong perturbation of its (electronic) structure and a pinning of the Fermi level 0.54 eV below the MoS2 conduction band due to interface states. MoS2 is physisorbed on Au, where the bonding hardly perturbs the electronic structure. The bonding of MoS2 on other metals lies between these two extreme cases, with interface interactions for the late 3d transition metals Co, Ni, Cu and the simple metal Mg that are somewhat stronger than for the late 4d/5d transition metals Pd, Ag, Pt and the simple metal Al. Even a weak interaction, such as in the case of Al, gives interface states, however, with energies inside the MoS2 band gap, which pin the Fermi level below the conduction band.

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preprint2014arXiv

Li intercalation in graphite: a van der Waals density-functional study

Modeling layered intercalation compounds from first principles poses a problem, as many of their properties are determined by a subtle balance between van der Waals interactions and chemical or Madelung terms, and a good description of van der Waals interactions is often lacking. Using van der Waals density functionals we study the structures, phonons and energetics of the archetype layered intercalation compound Li-graphite. Intercalation of Li in graphite leads to stable systems with calculated intercalation energies of $-0.2$ to $-0.3$~eV/Li atom, (referred to bulk graphite and Li metal). The fully loaded stage 1 and stage 2 compounds LiC$_6$ and Li$_{1/2}$C$_6$ are stable, corresponding to two-dimensional $\sqrt3\times\sqrt3$ lattices of Li atoms intercalated between two graphene planes. Stage $N>2$ structures are unstable compared to dilute stage 2 compounds with the same concentration. At elevated temperatures dilute stage 2 compounds easily become disordered, but the structure of Li$_{3/16}$C$_6$ is relatively stable, corresponding to a $\sqrt7\times\sqrt7$ in-plane packing of Li atoms. First-principles calculations, along with a Bethe-Peierls model of finite temperature effects, allow for a microscopic description of the observed voltage profiles.

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preprint2010arXiv

Nonlinear screening of charges induced in graphene by metal contacts

To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a consequence of the ultra-relativistic nature of the electron spectrum near the Fermi energy. The induced potential decays with the distance from the metal contact as x^{-1/2} and x^{-1} for undoped and doped graphene, respectively, breaking its spatial homogeneity. In the contact region the metal contact can give rise to the formation of a p-p&#39;, n-n&#39;, p-n junction (or with additional gating or impurity doping, even a p-n-p&#39; junction) that contributes to the overall resistance of the graphene sample, destroying its electron-hole symmetry. Using the work functions of metal-covered graphene recently calculated by Khomyakov et al. [Phys. Rev. B 79, 195425 (2009)] we predict the boundary potential and junction type for different metal contacts.

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preprint2009arXiv

First-principles study of the interaction and charge transfer between graphene and metals

Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density functional theory. The bonding of graphene to Al, Ag, Cu, Au and Pt(111) surfaces is so weak that its unique &#34;ultrarelativistic&#34; electronic structure is preserved. The interaction does, however, lead to a charge transfer that shifts the Fermi level by up to 0.5 eV with respect to the conical points. The crossover from p-type to n-type doping occurs for a metal with a work function ~5.4 eV, a value much larger than the work function of free-standing graphene, 4.5 eV. We develop a simple analytical model that describes the Fermi level shift in graphene in terms of the metal substrate work function. Graphene interacts with and binds more strongly to Co, Ni, Pd and Ti. This chemisorption involves hybridization between graphene $p_z$-states and metal d-states that opens a band gap in graphene. The graphene work function is as a result reduced considerably. In a current-in-plane device geometry this should lead to n-type doping of graphene.

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preprint2000arXiv

CaB_6: a new semiconducting material for spin electronics

Ferromagnetism was recently observed at unexpectedly high temperatures in La-doped CaB_6. The starting point of all theoretical proposals to explain this observation is a semimetallic electronic structure calculated for CaB_6 within the local density approximation. Here we report the results of parameter-free quasiparticle calculations of the single-particle excitation spectrum which show that CaB_6 is not a semimetal but a semiconductor with a band gap of 0.8 eV. Magnetism in La_xCa_{1-x}B_6 occurs just on the metallic side of a Mott transition in the La-induced impurity band.

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