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M. Fanfoni

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Published work

4 published item(s)

preprint2015arXiv

Statistical approach based on 1D Voronoi tessellation as a tool for studying the randomness of fractional digits of some irrational numbers

An "experimental" study on the randomness of the fractional digits of $π$, $e$ and $ϕ$ irrational numbers are presented. This is done by exploiting the $1D$ Poisson-Voronoi tessellation. We employed two approaches and in both cases, within the numerical error, no differences have been detected between the irrational fractional digits and an equivalent random sequence of digits. The number of tested digits is $1.6 \times 10^7$ and $4 \times 10^7$ for the first and second approach, respectively. Although not shown here, we investigated several irrational numbers and all of them have displayed a similar behavior.

preprint2012arXiv

Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws

The theory of Kolmogorov-Johnson-Mehl-Avrami (KJMA) for phase transition kinetics is subjected to severe limitations concerning the functional form of the growth law. This paper is devoted to side step this drawback through the use of correlation function approach. Moreover, we put forward an easy-to-handle formula, written in terms of the experimentally accessible actual extended volume fraction, which is found to match several types of growths. Computer simulations have been done for corroborating the theoretical approach.

preprint2011arXiv

Hug-like island growth of Ge on strained vicinal Si(111) surfaces

We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.

preprint2010arXiv

Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.