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L. Persichetti

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 °C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors.

preprint2020arXiv

Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.

preprint2019arXiv

Single-atom electron paramagnetic resonance in a scanning tunneling microscope driven by a radiofrequency antenna at 4 K

Combining electron paramagnetic resonance (EPR) with scanning tunneling microscopy (STM) enables detailed insight into the interactions and magnetic properties of single atoms on surfaces. A requirement for EPR-STM is the efficient coupling of microwave excitations to the tunnel junction. Here, we achieve a coupling efficiency of the order of unity by using a radiofrequency antenna placed parallel to the STM tip, which we interpret using a simple capacitive-coupling model. We further demonstrate the possibility to perform EPR-STM routinely above 4 K using amplitude as well as frequency modulation of the radiofrequency excitation. We directly compare different acquisition modes on hydrogenated Ti atoms and highlight the advantages of frequency and magnetic field sweeps as well as amplitude and frequency modulation in order to maximize the EPR signal. The possibility to tune the microwave-excitation scheme and to perform EPR-STM at relatively high temperature and high power opens this technique to a broad range of experiments, ranging from pulsed EPR spectroscopy to coherent spin manipulation of single atom ensembles.

preprint2011arXiv

Hug-like island growth of Ge on strained vicinal Si(111) surfaces

We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.

preprint2010arXiv

Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.