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Source author record

M. F. Craciun

M. F. Craciun appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

11 published item(s)

preprint2015arXiv

Approaching magnetic ordering in graphene materials by FeCl$_3$ intercalation

We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ Ω/sq$ to $\approx 16 \ Ω/sq$ at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstrating the decoupling into parallel hole gases of each carbon layer composing the FeCl$_3$ intercalated structure. The phase coherence length ($\approx 1.2 μ$m at 280 mK) decreases rapidly only for temperatures higher than the 2-D magnetic ordering in the intercalant layer while it tends to saturate for temperatures lower than the antiferromagnetic ordering between the planes of FeCl$_3$ molecules providing the first evidence for magnetic ordering in the extreme two-dimensional limit of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter

We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD output channels, unlike previous designs where a conventional superconductor was used with tunnel barriers to the quantum dots (QD) of a different material. Superconductivity in graphene is induced via the proximity effect, thus resulting in both a large measured superconducting gap $Δ=0.5$meV, and a long coherence length $ξ=200$nm. The graphene-graphene, flat, two dimensional, superconductor-QD interface lowers the capacitance of the quantum dots, thus increasing the charging energy $E_C$ (in contrast to previous devices). As a result we measure a visibility of up to 96% and a splitting efficiency of up to 62%. Finally, the devices utilize graphene grown by chemical vapor deposition allowing for a standardized device design with potential for increased complexity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Unforeseen high temperature and humidity stability of FeCl$_3$ intercalated few layer graphene

We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforeseen stability of this transparent conductor to a relative humidity up to $100 \%$ at room temperature for 25 days, to a temperature up to $150\,^\circ$C in atmosphere and up to a temperature as high as $620\,^\circ$C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl$_3$ intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electronic transport properties of few-layer graphene materials

Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.

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preprint2011arXiv

Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy.

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preprint2011arXiv

Tuneable electronic properties in graphene

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tuning the electronic transport properties of graphene through functionalisation with fluorine

Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and multilayers by functionalisation with fluorine. We show that by adjusting the fluorine content different electronic transport regimes can be accessed. For monolayer samples, with increasing the fluorine content, we observe a transition from electronic transport through Mott variable range hopping in two dimensions to Efros - Shklovskii variable range hopping. Multilayer fluorinated graphene with high concentration of fluorine show two-dimensional Mott variable range hopping transport, whereas CF0.28 multilayer flakes have a band gap of 0.25eV and exhibit thermally activated transport. Our experimental findings demonstrate that the ability to control the degree of functionalisation of graphene is instrumental to engineer different electronic properties in graphene materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Accessing the transport properties of graphene and its multi-layers at high carrier density

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal for a magnetic field induced graphene dot

Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth $ΔV$ relative to a flat asymptotic part and quantum states formed from the zeroth Landau level are considered. The energy of the dot states cannot be lower than $-ΔV$ relative to the asymptotic potential. Consequently, when $ΔV$ is chosen to be about half of the gap between the zeroth and first Landau levels, the dot states are isolated energetically in the gap between Landau level 0 and Landau level -1. This is confirmed with numerical calculations of the magnetic field dependent energy spectrum and the quantum states. Remarkably, an antidot formed by reversing the sign of $ΔV$ also confines electrons but in the energy region between Landau level 0 and Landau level +1. This unusual behaviour gives an unambiguous signal of the novel physics of graphene quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Contact resistance in graphene-based devices

We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene ($\sim800 \pm 200 Ωμm$), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Double-gated graphene-based devices

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO$_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO$_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO$_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO$_2$ layer.

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