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M. D. Stiles

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Published work

25 published item(s)

preprint2020arXiv

Spintronics for neuromorphic computing

Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the magnetic and electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits, and magnetic tunnel junctions are of particular interest as neuromorphic computing elements because they are compatible with standard integrated circuits and can support multiple functionalities. Here we review the development of spintronic devices for neuromorphic computing. We examine how magnetic tunnel junctions can serve as synapses and neurons, and how magnetic textures, such as domain walls and skyrmions, can function as neurons. We also explore spintronics-based implementations of neuromorphic computing tasks, such as pattern recognition in an associative memory, and discuss the challenges that exist in scaling up these systems.

preprint2016arXiv

Perpendicular magnetic anisotropy of two-dimensional Rashba ferromagnets

We compute the magnetocrystalline anisotropy energy within two-dimensional Rashba models. For a ferromagnetic free-electron Rashba model, the magnetic anisotropy is exactly zero regardless of the strength of the Rashba coupling, unless only the lowest band is occupied. For this latter case, the model predicts in-plane anisotropy. For a more realistic Rashba model with finite band width, the magnetic anisotropy evolves from in-plane to perpendicular and back to in-plane as bands are progressively filled. This evolution agrees with first-principles calculations on the interfacial anisotropy, suggesting that the Rashba model captures energetics leading to anisotropy originating from the interface provided that the model takes account of the finite Brillouin zone. The results show that the electron density modulation by doping or an external voltage is more important for voltage-controlled magnetic anisotropy than the modulation of the Rashba parameter.

preprint2016arXiv

Spin Transport at Interfaces with Spin-Orbit Coupling: Formalism

We generalize magnetoelectronic circuit theory to account for spin transfer to and from the atomic lattice via interfacial spin-orbit coupling. This enables a proper treatment of spin transport at interfaces between a ferromagnet and a heavy-metal non-magnet. This generalized approach describes spin transport in terms of drops in spin and charge accumulations across the interface (as in the standard approach), but additionally includes the responses from in-plane electric fields and offsets in spin accumulations. A key finding is that in-plane electric fields give rise to spin accumulations and spin currents that can be polarized in any direction, generalizing the Rashba-Edelstein and spin Hall effects. The spin accumulations exert torques on the magnetization at the interface when they are misaligned from the magnetization. The additional out-of-plane spin currents exert torques via the spin-transfer mechanism on the ferromagnetic layer. To account for these phenomena we also describe spin torques within the generalized circuit theory. The additional effects included in this generalized circuit theory suggest modifications in the interpretations of experiments involving spin orbit torques, spin pumping, spin memory loss, the Rashba-Edelstein effect, and the spin Hall magnetoresistance.

preprint2016arXiv

Spin Transport at Interfaces with Spin-Orbit Coupling: Phenomenology

This paper presents the boundary conditions needed for drift-diffusion models to treat interfaces with spin-orbit coupling. Using these boundary conditions for heavy metal/ferromagnet bilayers, solutions of the drift-diffusion equations agree with solutions of the spin-dependent Boltzmann equation and allow for a much simpler interpretation of the results. A key feature of these boundary conditions is their ability to capture the role that in-plane electric fields have on the generation of spin currents that flow perpendicularly to the interface. The generation of these spin currents is a direct consequence of the effect of interfacial spin-orbit coupling on interfacial scattering. In heavy metal/ferromagnet bilayers, these spin currents provide an important mechanism for the creation of damping-like and field-like torques; they also lead to possible reinterpretations of experiments in which interfacial contributions to spin torques are thought to be suppressed.

preprint2015arXiv

Critical current and linewidth reduction in spin-torque nano-oscillators by delayed self-injection

Based on theoretical models, the dynamics of spin-torque nano-oscillators can be substantially modified by re-injecting the emitted signal to the input of the oscillator after some delay. Numerical simulations for vortex magnetic tunnel junctions show that with reasonable parameters this approach can decrease critical currents as much as 25 % and linewidths by a factor of 4. Analytical calculations, which agree well with simulations, demonstrate that these results can be generalized to any kind of spin-torque oscillator.

preprint2015arXiv

Intrinsic Spin Torque Without Spin-Orbit Coupling

We derive an intrinsic contribution to the non-adiabatic spin torque for non-uniform magnetic textures. It differs from previously considered contributions in several ways and can be the dominant contribution in some models. It does not depend on the change in occupation of the electron states due to the current flow but rather is due to the perturbation of the electronic states when an electric field is applied. Therefore it should be viewed as electric-field-induced rather than current-induced. Unlike previously reported non-adiabatic spin torques, it does not originate from extrinsic relaxation mechanisms nor spin-orbit coupling. This intrinsic non-adiabatic spin torque is related by a chiral connection to the intrinsic spin-orbit torque that has been calculated from the Berry phase for Rashba systems.

preprint2014arXiv

Angular dependence of spin-orbit spin transfer torques

In ferromagnet/heavy metal bilayers, an in-plane current gives rise to spin-orbit spin transfer torque which is usually decomposed into field-like and damping-like torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the field-like torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the field-like torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the damping-like torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin transfer torques

preprint2014arXiv

Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance

Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show how these effects can be used to reliably switch perpendicularly magnetized layers and to move domain walls. A drift-diffusion treatment of the anomalous Hall effect and the anisotropic magnetoresistance describes the spin currents that flow in directions perpendicular to the electric field. In systems with two ferromagnetic layers separated by a spacer layer, an in-plane electric field cause spin currents to be injected from one layer into the other, creating spin transfer torques. Unlike the related spin Hall effect in non-magnetic materials, the anomalous Hall effect and the anisotropic magnetoresistance allow control of the orientation of the injected spins, and hence torques, by changing the direction of the magnetization in the injecting layer. The torques on one layer show a rich angular dependence as a function of the orientation of the magnetization in the other layer. The control of the torques afforded by changing the orientation of the magnetization in a fixed layer makes it possible to reliably switch a perpendicularly magnetized free layer. Our calculated critical current densities for a representative CoFe/Cu/FePt structure show that the switching can be efficient for appropriate material choices. Similarly, control of the magnetization direction can drive domain wall motion, as shown for NiFe/Cu/NiFe structures.

preprint2013arXiv

Chirality from interfacial spin-orbit coupling effects in magnetic bilayers

As nanomagnetic devices scale to smaller sizes, spin-orbit coupling due to the broken structural inversion symmetry at interfaces becomes increasingly important. Here we study interfacial spin-orbit coupling effects in magnetic bilayers using a simple Rashba model. The spin-orbit coupling introduces chirality into the behavior of the electrons and through them into the energetics of the magnetization. In the derived form of the magnetization dynamics, all of the contributions that are linear in the spin-orbit coupling follow from this chirality, considerably simplifying the analysis. For these systems, an important consequence is a correlation between the Dzyaloshinskii-Moriya interaction and the spin-orbit torque. We use this correlation to analyze recent experiments.

preprint2013arXiv

Current induced torques and interfacial spin-orbit coupling: Semiclassical Modeling

In bilayer nanowires consisting of a ferromagnetic layer and a non-magnetic layer with strong spin-orbit coupling, currents create torques on the magnetization beyond those found in simple ferromagnetic nanowires. The resulting magnetic dynamics appear to require torques that can be separated into two terms, damping-like and field-like. The damping-like torque is typically derived from models describing the bulk spin Hall effect and the spin transfer torque, and the field-like torque is typically derived from a Rashba model describing interfacial spin-orbit coupling. We derive a model based on the Boltzmann equation that unifies these approaches. We also consider an approximation to the Boltzmann equation, the drift-diffusion model, that qualitatively reproduces the behavior, but quantitatively fails to reproduce the results. We show that the Boltzmann equation with physically reasonable parameters can match the torques for any particular sample, but in some cases, it fails to describe the experimentally observed thickness dependences.

preprint2013arXiv

Current-induced torques and interfacial spin-orbit coupling

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here, we calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism using first principles methods. We focus exclusively on the analogue to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the "field-like" torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

preprint2013arXiv

Self-consistent calculation of spin transport and magnetization dynamics

A spin-polarized current transfers its spin-angular momentum to a local magnetization, exciting current-induced magnetization dynamics. So far, most studies in this field have focused on the direct effect of spin transport on magnetization dynamics, but ignored the feedback from the magnetization dynamics to the spin transport and back to the magnetization dynamics. Although the feedback is usually weak, there are situations when it can play an important role in the dynamics. In such situations, self-consistent calculations of the magnetization dynamics and the spin transport can accurately describe the feedback. This review describes in detail the feedback mechanisms, and presents recent progress in self-consistent calculations of the coupled dynamics. We pay special attention to three representative examples, where the feedback generates non-local effective interactions for the magnetization. Possibly the most dramatic feedback example is the dynamic instability in magnetic nanopillars with a single magnetic layer. This instability does not occur without non-local feedback. We demonstrate that full self-consistent calculations generate simulation results in much better agreement with experiments than previous calculations that addressed the feedback effect approximately. The next example is for more typical spin valve nanopillars. Although the effect of feedback is less dramatic because even without feedback the current can induce magnetization oscillation, the feedback can still have important consequences. For instance, we show that the feedback can reduce the linewidth of oscillations, in agreement with experimental observations. Finally, we consider nonadiabatic electron transport in narrow domain walls. The non-local feedback in these systems leads to a significant renormalization of the effective nonadiabatic spin transfer torque.

preprint2013arXiv

Spin-Wave Propagation in the Presence of Interfacial Dzyaloshinskii-Moriya Interaction

In ferromagnetic thin films, broken inversion symmetry and spin-orbit coupling give rise to interfacial Dzyaloshinskii-Moriya interactions. Analytic expressions for spin-wave properties show that the interfacial Dzyaloshinskii-Moriya interaction leads to non-reciprocal spin-wave propagation, i.e. different properties for spin waves propagating in opposite directions. In favorable situations, it can increase the spin-wave attenuation length. Comparing measured spin wave properties in ferromagnet$|$normal metal bilayers and other artificial layered structures with these calculations can provide a useful characterization of the interfacial Dzyaloshinskii-Moriya interactions.

preprint2011arXiv

Effects of disorder on magnetic vortex gyration

A vortex gyrating in a magnetic disk has two regimes of motion in the presence of disorder. At large gyration amplitudes, the vortex core moves quasi-freely through the disorder potential. As the amplitude decreases, the core can become pinned at a particular point in the potential and precess with a significantly increased frequency. In the pinned regime, the amplitude of the gyration decreases more rapidly than it does at larger precession amplitudes in the quasi-free regime. In part, this decreased decay time is due to an increase in the effective damping constant and in part due to geometric distortion of the vortex. A simple model with a single pinning potential illustrates these two contributions.

preprint2011arXiv

Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.

preprint2011arXiv

Mechanism for puddle formation in graphene

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the puddle formation have remained elusive. We demonstrate numerically that in sharp contrast to monolayer graphene, the normalized autocorrelation function for the puddle landscape in bilayer graphene depends only on the distance between the graphene and the source of the long-ranged impurity potential. By comparing with available experimental data, we find quantitative evidence for the implied differences in scanning tunneling microscopy measurements of electron and hole puddles for monolayer and bilayer graphene in nominally the same disorder potential.

preprint2011arXiv

Semiclassical Boltzmann transport theory for graphene multilayers

We calculate the conductivity of arbitrarily stacked multilayer graphene sheets within a relaxation time approximation, considering both short-range and long-range impurities. We theoretically investigate the feasibility of identifying the stacking order of these multilayers using transport measurements. For relatively clean samples, the conductivities of the various stacking configurations depend on the carrier density as a power-law for over two decades. This dependence arises from a low density decomposition of the multilayer band structure into a sum of chiral Hamiltonians. For dirty samples, the simple power-law relationship no longer holds. Nonetheless, identification of the number of layers and stacking sequence is still possible by careful comparison of experimental data to the results presented here.

preprint2010arXiv

Current-induced torques in the presence of spin-orbit coupling

In systems with strong spin-orbit coupling, the relationship between spin-transfer torque and the divergence of the spin current is generalized to a relation between spin transfer torques, total angular momentum current, and mechanical torques. In ferromagnetic semiconductors, where the spin-orbit coupling is large, these considerations modify the behavior of the spin transfer torques. One example is a persistent spin transfer torque in a spin valve: the spin transfer torque does not decay away from the interface, but approaches a constant value. A second example is a mechanical torque at single ferromagnetic-nonmagnetic interface.

preprint2010arXiv

Effects of Disorder and Internal Dynamics on Vortex Wall Propagation

Experimental measurements of domain wall propagation are typically interpreted by comparison to reduced models that ignore both the effects of disorder and the internal dynamics of the domain wall structure. Using micromagnetic simulations, we study vortex wall propagation in magnetic nanowires induced by fields or currents in the presence of disorder. We show that the disorder leads to increases and decreases in the domain wall velocity depending on the conditions. These results can be understood in terms of an effective damping that increases as disorder increases. As a domain wall moves through disorder, internal degrees of freedom get excited, increasing the energy dissipation rate.

preprint2010arXiv

Temperature dependence of the diffusive conductivity of bilayer graphene

Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier density. We find that the temperature dependence of the conductivity depends strongly on the amount of disorder. In the regime relevant to most experiments, the conductivity is a function of T/T*, where T* is the characteristic temperature set by disorder. We demonstrate that experimental data taken from various groups collapse onto a theoretically predicted scaling function.

preprint2009arXiv

Magnetic dynamics with spin transfer torques near the Curie temperature

We use atomistic stochastic Landau-Lifshitz-Slonczewski simulations to study the interaction between large thermal fluctuations and spin transfer torques in the magnetic layers of spin valves. At temperatures near the Curie temperature $T_{\rm C}$, spin currents measurably change the size of the magnetization (i.e. there is a {\it longitudinal} spin transfer effect). The change in magnetization of the free magnetic layer in a spin valve modifies the temperature dependence of the applied field-applied current phase diagram for temperatures near $T_{\rm C}$. These atomistic simulations can be accurately described by a Landau-Lifshitz-Bloch + Slonczewski equation, which is a thermally averaged mean field theory. Both the simulation and the mean field theory show that a longitudinal spin transfer effect can be a substantial fraction of the magnetization close to $T_{\rm C}$.

preprint2008arXiv

Non-Adiabatic Spin Transfer Torque in Real Materials

The motion of simple domain walls and of more complex magnetic textures in the presence of a transport current is described by the Landau-Lifshitz-Slonczewski (LLS) equations. Predictions of the LLS equations depend sensitively on the ratio between the dimensionless material parameter $β$ which characterizes non-adiabatic spin-transfer torques and the Gilbert damping parameter $α$. This ratio has been variously estimated to be close to 0, close to 1, and large compared to 1. By identifying $β$ as the influence of a transport current on $α$, we derive a concise, explicit and relatively simple expression which relates $β$ to the band structure and Bloch state lifetimes of a magnetic metal. Using this expression we demonstrate that intrinsic spin-orbit interactions lead to intra-band contributions to $β$ which are often dominant and can be (i) estimated with some confidence and (ii) interpreted using the "breathing Fermi surface" model.

preprint2007arXiv

A numerical method to solve the Boltzmann equation for a spin valve

We present a numerical algorithm to solve the Boltzmann equation for the electron distribution function in magnetic multilayer heterostructures with non-collinear magnetizations. The solution is based on a scattering matrix formalism for layers that are translationally invariant in plane so that properties only vary perpendicular to the planes. Physical quantities like spin density, spin current, and spin-transfer torque are calculated directly from the distribution function. We illustrate our solution method with a systematic study of the spin-transfer torque in a spin valve as a function of its geometry. The results agree with a hybrid circuit theory developed by Slonczewski for geometries typical of those measured experimentally.

preprint2007arXiv

Model for a collimated spin wave beam generated by a single layer, spin torque nanocontact

A model of spin torque induced magnetization dynamics based upon semi-classical spin diffusion theory for a single layer nanocontact is presented. The model incorporates effects due to the current induced Oersted field and predicts the generation of a variety of spatially dependent, coherent, precessional magnetic wave structures. Directionally controllable collimated spin wave beams, vortex spiral waves, and localized standing waves are found to be excited by the interplay of the Oersted field and the orientation of an applied field. These fields act as a spin wave ``corral'' around the nanocontact that controls the propagation of spin waves in certain directions.

preprint2003arXiv

Spin Nomenclature for Semiconductors and Magnetic Metals

The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron spin, while in magnetic metals it is based on the orientation of the moment. In the rapidly expanding field of spintronics, where both semiconductors and metallic metals are important, some commonly used terms ("spin-up," "majority spin") can have different meanings. Here, we clarify nomenclature relevant to spin transport and optical polarization by relating the common physical observables and "definitions" of spin polarization to the fundamental concept of conservation of angular momentum within a well-defined reference frame.