Source author record

M. D. Nguyen

M. D. Nguyen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2019arXiv

The Effect of Magnetic Impurities on Superfluid $^3$He in Aerogel

The critical field for superfluid $^3$He in axially compressed, anisotropic silica aerogel is shown to be the result of an anisotropic distribution of magnetic impurities affecting the superfluid $A$ phase. The critical field results from the fact that the $A$ phase is suppressed relative to the $B$ phase which is immune to the effects of magnetic impurities. In the absence of magnetic quasiparticle scattering in anisotropic aerogel, we find that the relative symmetry of $A$ and $B$ phase order parameters is the same as in isotropic aerogel, just as it is in pure superfluid $^3$He. These results are of potential importance for understanding unconventional superconductivity.

preprint2014arXiv

Ultrafast THz Faraday Rotation in Graphene

Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type CVD graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in GaAs, InP and Graphene. Static measurements probe the equilibrium carrier density and momentum scattering rate. Time-resolved (optical pump/THz probe) measurements probe the change in these quantities following photoexcitation. In a typical CVD graphene sample we found that 0.5ps following photoexcitation with 1*10^13 photons/cm2 pulses at 800nm the effective hole scattering time decreased from 37fs to 34.5fs, while the carrier concentration increased from 2.0*10^12/cm2 to 2.04*10^12/cm2, leading to a transient decrease in the conductivity of the film.