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M. Currie

M. Currie appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2016arXiv

Optical control of charged exciton states in tungsten disulfide

A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an enhanced feature on the low energy side of the E12g peak. Photoluminescence and optical reflectivity measurements confirm the existence of the prepared trion state. This technique also prepares intermediate regimes with controlled luminescence amplitudes of the neutral and charged exciton. This effect is reversible by exposing the sample to air, indicating the change is mitigated by surface interactions with the ambient environment. This method provides a tool to modify optical emission energy and to isolate physical processes in this and other two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for monolayer WS2 and WSe2. We observe peaks in the optical reflectivity/absorption spectra corresponding to the ground- and excited-state excitons (1s and 2s states). From these features, we determine lower bounds free of any model assumptions for the exciton binding energies as E2sA - E1sA of 0.83 eV and 0.79 eV for WS2 and WSe2, respectively, and for the corresponding band gaps Eg >= E2sA of 2.90 and 2.53 eV at 4K. Because the binding energies are large, the true band gap is substantially higher than the dominant spectral feature commonly observed with photoluminescence. This information is critical for emerging applications, and provides new insight into these novel monolayer semiconductors.

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preprint2014arXiv

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.

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