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B. T. Jonker

B. T. Jonker contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Magneto-Optical Measurements of the Negatively Charged 2$s$ Exciton in WSe$_2$

Monolayer transition metal dichalcogenides host a variety of optically excited quasiparticles species that stem from two-dimensional confinement combined with relatively large carrier effective masses and reduced dielectric screening. The magnetic response of these quasiparticles gives information on their spin and valley configurations, nuanced carrier interactions, and insight into the underlying band structure. Recently, there have been several reports of 2$s$/3$s$ charged excitons in TMDs, but very little is still known about their response to external magnetic fields. Using photoluminescence excitation spectroscopy, we observe the presence of the 2$s$ charged exciton and report for the first time its response to an applied magnetic field. We benchmark this response against the neutral exciton and find that both the 2$s$ neutral and charged excitons exhibit similar behavior with g-factors of g$_{\rm{X_0^{2s}}}$=-5.20$\pm$0.11 and g$_{\rm{X_-^{2s}}}$=-4.98$\pm$0.11, respectively.

preprint2016arXiv

Optical control of charged exciton states in tungsten disulfide

A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an enhanced feature on the low energy side of the E12g peak. Photoluminescence and optical reflectivity measurements confirm the existence of the prepared trion state. This technique also prepares intermediate regimes with controlled luminescence amplitudes of the neutral and charged exciton. This effect is reversible by exposing the sample to air, indicating the change is mitigated by surface interactions with the ambient environment. This method provides a tool to modify optical emission energy and to isolate physical processes in this and other two-dimensional materials.

preprint2014arXiv

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for monolayer WS2 and WSe2. We observe peaks in the optical reflectivity/absorption spectra corresponding to the ground- and excited-state excitons (1s and 2s states). From these features, we determine lower bounds free of any model assumptions for the exciton binding energies as E2sA - E1sA of 0.83 eV and 0.79 eV for WS2 and WSe2, respectively, and for the corresponding band gaps Eg >= E2sA of 2.90 and 2.53 eV at 4K. Because the binding energies are large, the true band gap is substantially higher than the dominant spectral feature commonly observed with photoluminescence. This information is critical for emerging applications, and provides new insight into these novel monolayer semiconductors.

preprint2012arXiv

Electrical injection and detection of spin accumulation in Ge at room temperature

We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We observe significant spin accumulation in the Ge up to room temperature. We observe precessional dephasing of the spin accumulation (the Hanle effect) in an applied magnetic field for both forward and reverse bias (spin extraction and injection), and determine spin lifetimes and corresponding diffusion lengths for temperatures of 225 K to 300 K. The room temperature spin lifetime increases from τs = 50 ps to 123 ps with decreasing electron concentration, as expected from electron spin resonance work on bulk Ge. The measured spin resistance-area product is in good agreement with values predicted by theory for samples with carrier densities below the metal-insulator transition (MIT), but 100x larger for samples above the MIT. These data demonstrate that the spin accumulation measured occurs in the Ge, although dopant-derived interface or band states may enhance the measured spin voltage above the MIT. We estimate the polarization in the Ge to be on the order of 1%.

preprint2009arXiv

Electrical spin injection into Si(001) through a SiO2 tunnel barrier

We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the spin-polarized electrons radiatively recombining in the Si originate from the Fe. A rate equation analysis provides a lower bound of 30% for the electron spin polarization in the Si at 5 K.

preprint2003arXiv

Spin Nomenclature for Semiconductors and Magnetic Metals

The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron spin, while in magnetic metals it is based on the orientation of the moment. In the rapidly expanding field of spintronics, where both semiconductors and metallic metals are important, some commonly used terms (&#34;spin-up,&#34; &#34;majority spin&#34;) can have different meanings. Here, we clarify nomenclature relevant to spin transport and optical polarization by relating the common physical observables and &#34;definitions&#34; of spin polarization to the fundamental concept of conservation of angular momentum within a well-defined reference frame.