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M. Cather Simpson

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.optics

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preprint2020arXiv

LIPSS-Sticks: Laser induced double self organization enhances the broadband light harvesting of TiO2 nanotube arrays

Sub-wavelength laser induced periodic surface structures (LIPSS-Sticks) created by ultrashort pulsed laser irradiation on the surface of titanium are used for the first time to template the electrochemical growth of titanium dioxide nanotube arrays. This is an example of a double self-organized process, as both LIPSS formation and electrochemical anodization involve spontaneous generation of order from initially non-ordered precursors. LIPSS-Sticks have a 2x greater visible to near infrared light (400 - 1400 nm) collection efficiency compared to flat titanium dioxide due to the enhanced light scattering from grating-like structures. The growth of nanostructures with time was modelled electrostatically to explain the features of a templated anodization process that differ from the usual anodization of flat surfaces. This new templated growth method is general and can also be applied to Cu, W, Fe, Ti alloys and Al for the fabrication of hierarchically nanostructured surfaces using two complementary fabrication techniques: ultrashort pulsed laser ablation and electrochemical anodization.

preprint2016arXiv

Effects of dopant type and concentration on the femtosecond laser ablation threshold and incubation behaviour of silicon

In laser micromachining, the ablation threshold (minimum fluence required to cause ablation) is a key performance parameter and overall indicator of the efficiency of material removal. For pulsed laser micromachining, this important observable depends upon material properties, pulse properties and the number of pulses applied in a complex manner that is not yet well understood. The incubation effect is one example. It manifests as a change in the ablation threshold as a function of number of laser pulses applied and is driven by photoinduced defect accumulation in the material. Here, we study femtosecond (800 nm, 110 fs, 0.1-1 mJ/pulse) micromachining of a material with well-defined initial defect concentrations: doped Si across a range of dopant types and concentrations. The single-pulse ablation threshold (Fth,1) was observed to decrease with increasing dopant concentration, from a maximum of 0.70 J/cm2 (+/-0.02) for undoped Si to 0.51 J/cm2 (+/-0.01) for highly N-type doped Si. The effect was greater for N-type doped Si than for P-type, consistent with the higher carrier mobility of electrons compared to holes. In contrast, the infinite-pulse ablation threshold (Fth,inf) was the same for all doping levels and types. We attribute this asymptotic behaviour to a maximum defect concentration that is independent of the initial defect concentration and type. These results lend insight into the mechanism of multipulse, femtosecond laser ablation.