Researcher profile

M. Breitkreiz

M. Breitkreiz contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Surface photogalvanic effect in Weyl semimetals

The photogalvanic effect -- a rectified current induced by light irradiation -- requires the intrinsic symmetry of the medium to be sufficiently low, which strongly limits candidate materials for this effect. In this work we explore how in Weyl semimetals the photogalvanic effect can be enabled and controlled by design of the material surface. Specifically, we provide a theory of ballistic linear and circular photogalvanic current in a Weyl semimetal spatially confined to a slab under general and variable surface boundary conditions. The results are applicable to Weyl semimetals with an arbitrary number of Weyl nodes at radiation frequencies small compared to the energy of non-linear terms in the dispersion at the Fermi level. The confinement-induced response is tightly linked to the configuration of Fermi-arc surface states, specifically the Fermi-arc connectivity and direction of emanation from the Weyl nodes, thus inheriting the same directionality and sensitivity to boundary conditions. As a result, the photogalvanic response of the system becomes much richer than that of an infinite system, and may be tuned via surface manipulations.

preprint2020arXiv

Determination of the Fermi surface and field-induced quasi-particle tunneling around the Dirac nodal-loop in ZrSiS

Unambiguous and complete determination of the Fermi surface is a primary step in understanding the electronic properties of topical metals and semi-metals, but only in a relatively few cases has this goal been realized. In this work, we present a systematic high-field quantum oscillation study up to 35 T on ZrSiS, a textbook example of a nodal-line semimetal with only linearly dispersive bands crossing the Fermi energy. The topology of the Fermi surface is determined with unprecedented precision and all pockets are identified by comparing the measured angle dependence of the quantum oscillations to density functional theory calculations. Comparison of the Shubnikov-de Haas and de Haas-van Alphen oscillations at low temperatures and analysis of the respective Dingle plots reveal the presence of significantly enhanced scattering on the electron pocket. Above a threshold field that is aligned along the c-axis of the crystal, the specific cage-like Fermi surface of ZrSiS allows for electron-hole tunneling to occur across finite gaps in momentum space leading to quantum oscillations with a complex frequency spectrum. Additional high-frequency quantum oscillations signify magnetic breakdown orbits that encircle the entire Dirac nodal loop. We suggest that the persistence of quantum oscillations in the resistivity to high temperatures is caused by Stark interference between orbits of nearly equal masses.