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M. Bockrath

M. Bockrath contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci physics.app-ph

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preprint2019arXiv

Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices

We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.

preprint2012arXiv

Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor ν=0, ABC TLG exhibits quantum Hall plateaus at ν=-30, \pm 18, \pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.

preprint2011arXiv

Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene

The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, when the electron-density is at the carrier neutrality point (CNP). The theoretically proposed gaps[6,7,10] in bilayer graphene are analogous[17,18] to the masses generated by broken symmetries in particle physics and give rise to large momentum-space Berry curvatures[8,19] accompanied by spontaneous quantum Hall effects[7-9]. Though recent experiments[20-23] have provided convincing evidence of strong electronic correlations near the CNP in BLG, the presence of gaps is difficult to establish because of the lack of direct spectroscopic measurements. Here we present transport measurements in ultra-clean double-gated BLG, using source-drain bias as a spectroscopic tool to resolve a gap of ~2 meV at the CNP. The gap can be closed by an electric field E\bot \sim13 mV/nm but increases monotonically with a magnetic field B, with an apparent particle-hole asymmetry above the gap, thus providing the first mapping of the ground states in BLG.

preprint2000arXiv

Luttinger liquid behavior in metallic carbon nanotubes

Coulomb interaction effects have pronounced consequences in carbon nanotubes due to their 1D nature. In particular, correlations imply the breakdown of Fermi liquid theory and typically lead to Luttinger liquid behavior characterized by pronounced power-law suppression of the transport current and the density of states, and spin-charge separation. This paper provides a review of the current understanding of non-Fermi liquid effects in metallic single-wall nanotubes (SWNTs). We provide a self-contained theoretical discussion of electron-electron interaction effects and show that the tunneling density of states exhibits power-law behavior. The power-law exponent depends on the interaction strength parameter $g$ and on the geometry of the setup. We then show that these features are observed experimentally by measuring the tunneling conductance of SWNTs as a function of temperature and voltage. These tunneling experiments are obtained by contacting metallic SWNTs to two nanofabricated gold electrodes. Electrostatic force microscopy (EFM) measurements show that the measured resistance is due to the contact resistance from the transport barrier formed at the electrode/nanotube junction. These EFM measurements show also the ballistic nature of transport in these SWNTs. While charge transport can be nicely attributed to Luttinger liquid behavior, spin-charge separation has not been observed so far. We briefly describe a transport experiment that could provide direct evidence for spin-charge separation.