Source author record

M. Bernard

M. Bernard appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Temperature tunability of quantum emitter - cavity coupling in a photonic wire microcavity with shielded sidewall loss

Recent technological advancements have allowed to implement in solid-state cavity-based devices phenomena of quantum nature such as vacuum Rabi splitting, controllable single photon emission and quantum entanglement. For a sufficiently strong coupling between a quantum emitter and a cavity, large quality factors ($Q$) along with small modal volume ($V_{eff}$) are essential. Here we show that by applying a 5nm Al coating to the sidewalls of a submicrometer-sized Fabry-Pérot microcavity, the cavity $Q$ can be temperature-tuned from few hundreds at room temperatures to 2$\times$10$^5$ below 30~K. This is achieved by, first, a complete shielding of the sidewall loss with ideally reflecting lateral metallic mirrors and, secondly, a dramatic decrease of the cavity's axial loss for small-sized devices due to the largely off-axis wavevector within the multilayered structure. Our findings offer a novel temperature-tunable platform to study quantum electrodynamical phenomena of emitter-cavity coupling. We demonstrate that a Rabi splitting of 2g=24~GHz (0.142~nm) can be readily achieved at 40~K in a 0.8$μ$m-sized device, which has an $V_{eff}\approx0.0845~μ$m$^3$, comparable to best 2D photonic crystal (PhC) nanocavities.

preprint2015arXiv

High frequency electro-optic measurement of strained silicon racetrack resonators

The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $χ^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently of the applied strain when the applied voltage varies much faster than the carrier effective lifetime, and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free carrier effects, our results set an upper limit of $8\,pm/V$ to the induced high-speed $χ^{(2)}_{eff,zzz}$ tensor element at an applied stress of $-0.5\,GPa$. This upper limit is about one order of magnitude lower than the previously reported values for static electro-optic measurements.