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M. B. Lepetit

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4 publications

preprint2016arXiv

Crystal field investigation in the light rare earth R3_3Pt23_{23}Si11_{11} compounds

The crystalline electric field (CEF) is investigated in Pr3_3Pt23_{23}Si11_{11} and Nd3_3Pt23_{23}Si11_{11} by neutron spectroscopy (NS). At low temperature, the number of observed CEF excitations is consistent with the orthorhombic symmetry at the rare earth site. This agrees with previous results on Ce3_3Pt23_{23}Si11_{11}. For Pr- and Nd3_3Pt23_{23}Si11_{11}, the number of CEF parameters is too large to allow for an unambiguous determination. This determination is possible for Ce3_3Pt23_{23}Si11_{11}, due to a reduced number of parameters and to the availability of extensive experimental data. A specific procedure is developed for this purpose that combines genetic algorithmics and optimization methods. An unique set of CEF parameters is found for Ce3_3Pt23_{23}Si11_{11}. It reveals a strong anisotropy at the orthorhombic site, responsible for an easy threefold magnetization axis in the cubic system. Using a microscopic, mean-field, description, the magnetization processes in the paramagnetic and ferromagnetic phases of Ce3_3Pt23_{23}Si11_{11} are well reproduced. Ce3_3Pt23_{23}Si11_{11} is shown to realize a model for systems where conflicting anisotropies are forced to cooperate.

preprint2015arXiv

Phonons in the multiferroic langasite Ba_3\_3NbFe_3\_3Si_2\_2O_14\_{14} : evidences for symmetry breaking

The chiral langasite Ba_3\_3NbFe_3\_3Si_2\_2O_14\_{14} is a multiferroic compound. While its magnetic order below T_N\_N=27 K is now well characterised, its polar order is still controversial. We thus looked at the phonon spectrum and its temperature dependence to unravel possible crystal symmetry breaking. We combined optical measurements (both infrared and Raman spectroscopy) with ab initio calculations and show that signatures of a polar state are clearly present in the phonon spectrum even at room temperature. An additional symmetry lowering occurs below 120~K as seen from emergence of softer phonon modes in the THz range. These results confirm the multiferroic nature of this langasite and open new routes to understand the origin of the polar state.

preprint2010arXiv

Elastic and magnetic effects on the infrared phonon spectra of MnF2

We measured the temperature dependent infrared reflectivity spectra of MnF2 between 4 K and room temperature. We show that the phonon spectrum undergoes a strong renormalization at TN. The ab-initio calculation we performed on this compound accurately predict the magnitude and the direction of the phonon parameters changes across the antiferromagnetic transition, showing that they are mainly induced by the magnetic order. In this material, we found that the dielectric constant is mostly from phonon origin. The large change in the lattice parameters with temperature seen by X-ray diffraction as well as the A2u phonon softening below TN indicate that magnetic order induced distortions in MnF2 are compatible with the ferroelectric instabilities observed in TiO2, FeF2 and other rutile-type fluorides. This study also shows the anomalous temperature evolution of the lower energy Eu mode in the paramagnetic phase, which can be compared to that of the B1g one seen by Raman spectroscopy in many isostructural materials. This was interpreted as being a precursor of a phase transition from rutile to CaCl2 structure which was observed under pressure in ZnF2.

preprint2009arXiv

Constrained ferroelectric domain orientation in (BiFeO3)m(SrTiO3)n superlattice

Ferroelectric domains were investigated using piezoresponse force microscopy in superlattices composed of multiferroic BiFeO3 and SrTiO3 layers. Compared to single BiFeO3 thin films, a reduction in the domains size and a suppression of the in-plane orientation of domains are observed in a superlattice of (BiFeO3)4(SrTiO3)8, suggesting a constrained ferroelectric domain orientation along the out-of-plane <001> direction. Such modification of domain size and orientation in BiFeO3-based heterostructures could play a vital role on engineering the domains and domain wall mediated functional properties necessary for device applications

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