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Researcher profile

M. Ahsan Zeb

M. Ahsan Zeb contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.quant-gasphysics.comp-ph

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Published work

7 published item(s)

preprint2021arXiv

Efficient linear scaling mapping for permutation symmetric Fock spaces

Numerically solving a second quantised many-body model in the permutation symmetric Fock space can be challenging for two reasons: (i) an increased complication in the calculations of the matrix elements of various operators, and (ii) a poor scaling of the cost of these calculations with the Fock space size. We present a method that solves both these problems. We find a mapping that can be used to simplify the calculations of the matrix elements. The mapping is directly generated so its computational cost scales only linearly with the space size and is negligible even for large enough sizes that approach the thermodynamic limit. A fortran implementation of the method as a library - FockMap - is provided along with a test program.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic stopping power in gold: The role of d electrons and the H/He anomaly

The electronic stopping power of H and He moving through gold is obtained to high accuracy using time-evolving density-functional theory, thereby bringing usual first-principles accuracies into this kind of strongly coupled, continuum non-adiabatic processes in condensed matter. The two key unexplained features of what observed experimentally have been reproduced and understood: (i) The non-linear behaviour of stopping power versus velocity is a gradual crossover as excitations tail into the d-electron spectrum; and (ii) the low-velocity H/He anomaly (the relative stopping powers are contrary to established theory) is explained by the substantial involvement of the d electrons in the screening of the projectile even at the lowest velocities where the energy loss is generated by s-like electron-hole pair formation only.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Interplay between spin-orbit coupling and Hubbard interaction in SrIrO3 and related Pbnm perovskites

There has been a rapidly growing interest on the interplay between spin-orbit coupling (SOC) and Hubbard interaction U in correlated materials. A current consensus is that the stronger the SOC, the smaller is the critical interaction Uc required for a spin-orbit Mott insulator, because the atomic SOC splits a band into different total angular momentum bands narrowing the effective bandwidth. It was further claimed that at large enough SOC, the stronger the SOC, the weaker the Uc because in general the effective SOC is enhanced with increasing electron-electron interaction strength. Contrary to this expectation, we find that, in orthorhombic perovskite oxides (Pbnm), the stronger the SOC, the bigger the Uc. This is originated from a line of Dirac node in Jeff=1/2 bands near the Fermi level inherited from a combination of the lattice structure and a large SOC. Due to this protected line of nodes, there are small hole and electron pockets in SrIrO3, and such a small density of states makes Hubbard interaction less efficient in building a magnetic insulator. The full phase diagram in U vs. SOC is obtained, where non-magnetic semimetal, magnetic metal, and magnetic insulator are found. Magnetic ordering patterns beyond Uc are also presented. We further discuss implications of our finding in relation to other perovskites such as SrRhO3 and SrRuO3.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Semimetal and Topological Insulator in Perovskite Iridates

The two-dimensional layered perovskite Sr2IrO4 was proposed to be a spin-orbit Mott insulator, where the effect of Hubbard interaction is amplified on a narrow J_{eff} = 1/2 band due to strong spin-orbit coupling. On the other hand, the three-dimensional orthorhombic perovskite (Pbnm) SrIrO3 remains metallic. To understand the physical origin of the metallic state and possible transitions to insulating phases, we construct a tight-binding model for SrIrO3. The band structure possesses a line node made of J_{eff} = 1/2 bands below the Fermi level. As a consequence, instability towards magnetic ordering is suppressed and the system remains metallic. This line node, originating from the underlying crystal structure, turns into a pair of three-dimensional nodal points on the introduction of a staggered potential or spin-orbit coupling strength between alternating layers. Increasing this potential beyond a critical strength induces a transition to a strong topological insulator, followed by another transition to a normal band insulator. We propose that materials constructed with alternating Ir- and Rh-oxide layers along the (001) direction, such as Sr2IrRhO6, are candidates for a strong topological insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interface states in bilayer graphene and valleytronics

We study the states localized near an interface between conducting and insulating bilayer graphene (BLG) and show that they have highly unusual properties that have no analog in conventional systems. Moreover, the states belonging to the two independent valleys in the Brillouin zone of BLG show contrasting properties that allows a relatively easier experimental realization of various valley based functionalities desired in valleytronics without requiring any sophisticated techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Comment on "Photon-assisted electron transport in graphene: Scattering theory analysis"

It is argued that Trauzettel et al. [Phys. Rev. B 75, 035305 (2007)] made some mistakes in their calculations regarding the photon-assisted transport in graphene that lead to uncoupled sidebands and emergence of step-like features in dG/dV (G is differential conductance and V is the bias voltage). We discuss the relevant corrections and explain in detail how the correct results are expected to be quite different than the incorrect ones.

0 citations0 reviewsNo code linkedOpen access